Theory of electrical instabilities of mixed electronic and thermal origin

D. M. Kroll; M. H. Cohen

doi:10.1016/0022-3093(72)90190-1

Theory of electrical instabilities of mixed electronic and thermal origin

D. M. Kroll, M. H. Cohen

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Switching phenomena in amorphous semiconductors have been analyzed in a thermoelectric model. We have been able to obtain current-voltage characteristics from very general mathematical considerations concerning existence, uniqueness, local and global stability, bifurcation, and asymptotic behavior of the non-linear equations for temperature and field. Similar considerations show taht switching proceeds by the nucleation and growth of a hot spot in the interior. Detailed quantitative results are presented for simple models.

Original language	English (US)
Pages (from-to)	544-551
Number of pages	8
Journal	Journal of Non-Crystalline Solids
Volume	8-10
Issue number	C
DOIs	https://doi.org/10.1016/0022-3093(72)90190-1
State	Published - Jun 1972
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(72)90190-1

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title = "Theory of electrical instabilities of mixed electronic and thermal origin",

abstract = "Switching phenomena in amorphous semiconductors have been analyzed in a thermoelectric model. We have been able to obtain current-voltage characteristics from very general mathematical considerations concerning existence, uniqueness, local and global stability, bifurcation, and asymptotic behavior of the non-linear equations for temperature and field. Similar considerations show taht switching proceeds by the nucleation and growth of a hot spot in the interior. Detailed quantitative results are presented for simple models.",

author = "Kroll, {D. M.} and Cohen, {M. H.}",

year = "1972",

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T1 - Theory of electrical instabilities of mixed electronic and thermal origin

AU - Kroll, D. M.

AU - Cohen, M. H.

PY - 1972/6

Y1 - 1972/6

N2 - Switching phenomena in amorphous semiconductors have been analyzed in a thermoelectric model. We have been able to obtain current-voltage characteristics from very general mathematical considerations concerning existence, uniqueness, local and global stability, bifurcation, and asymptotic behavior of the non-linear equations for temperature and field. Similar considerations show taht switching proceeds by the nucleation and growth of a hot spot in the interior. Detailed quantitative results are presented for simple models.

AB - Switching phenomena in amorphous semiconductors have been analyzed in a thermoelectric model. We have been able to obtain current-voltage characteristics from very general mathematical considerations concerning existence, uniqueness, local and global stability, bifurcation, and asymptotic behavior of the non-linear equations for temperature and field. Similar considerations show taht switching proceeds by the nucleation and growth of a hot spot in the interior. Detailed quantitative results are presented for simple models.

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DO - 10.1016/0022-3093(72)90190-1

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AN - SCOPUS:18144450783

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VL - 8-10

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - C

ER -

Theory of electrical instabilities of mixed electronic and thermal origin

Abstract

All Science Journal Classification (ASJC) codes

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