Theoretical study of SiH3-defect stability and formation on the H-saturated Si(100)1×1 surface

A. Vittadini, A. Selloni, R. Car, M. Casarin

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

We present first-principles calculations for the initial stages of etching of Si(100) by H atoms. We find that adsorbed SiH3 species [(SiH3(a)] on the H-saturated Si(100)1×1 surface have a negative formation energy. Our results also indicate that the Si-Si backbond breaking which gives rise to the formation of these SiH3(a) defects is possibly promoted by a bonding state between hydrogen and silicon atoms in the second layer.

Original languageEnglish (US)
Pages (from-to)4348-4351
Number of pages4
JournalPhysical Review B
Volume46
Issue number7
DOIs
StatePublished - Jan 1 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Theoretical study of SiH3-defect stability and formation on the H-saturated Si(100)1×1 surface'. Together they form a unique fingerprint.

  • Cite this