The surface electronic structure of silicon terminated (100) diamond

A. K. Schenk; A. Tadich; M. J. Sear; D. Qi; A. T.S. Wee; A. Stacey; C. I. Pakes

doi:10.1088/0957-4484/27/27/275201

The surface electronic structure of silicon terminated (100) diamond

A. K. Schenk
, A. Tadich
, M. J. Sear
, D. Qi
, A. T.S. Wee
, A. Stacey
, C. I. Pakes

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ±0.1 eV.

Original language	English (US)
Article number	275201
Journal	Nanotechnology
Volume	27
Issue number	27
DOIs	https://doi.org/10.1088/0957-4484/27/27/275201
State	Published - May 23 2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Keywords

ARPES
diamond
NV centres

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10.1088/0957-4484/27/27/275201

Cite this

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title = "The surface electronic structure of silicon terminated (100) diamond",

abstract = "A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ±0.1 eV.",

keywords = "ARPES, diamond, NV centres",

author = "Schenk, \{A. K.\} and A. Tadich and Sear, \{M. J.\} and D. Qi and Wee, \{A. T.S.\} and A. Stacey and Pakes, \{C. I.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

month = may,

day = "23",

doi = "10.1088/0957-4484/27/27/275201",

language = "English (US)",

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T1 - The surface electronic structure of silicon terminated (100) diamond

AU - Schenk, A. K.

AU - Tadich, A.

AU - Sear, M. J.

AU - Qi, D.

AU - Wee, A. T.S.

AU - Stacey, A.

AU - Pakes, C. I.

PY - 2016/5/23

Y1 - 2016/5/23

N2 - A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ±0.1 eV.

AB - A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ±0.1 eV.

KW - ARPES

KW - diamond

KW - NV centres

UR - https://www.scopus.com/pages/publications/84975081952

UR - https://www.scopus.com/pages/publications/84975081952#tab=citedBy

U2 - 10.1088/0957-4484/27/27/275201

DO - 10.1088/0957-4484/27/27/275201

M3 - Article

C2 - 27211214

AN - SCOPUS:84975081952

SN - 0957-4484

VL - 27

JO - Nanotechnology

JF - Nanotechnology

IS - 27

M1 - 275201

ER -

The surface electronic structure of silicon terminated (100) diamond

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

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