The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts

Chongfei Shen, Antoine Kahn

Research output: Contribution to journalArticle

79 Scopus citations

Abstract

Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq3 and Al/Alq3 interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current - voltage measurements.

Original languageEnglish (US)
Pages (from-to)89-95
Number of pages7
JournalOrganic Electronics
Volume2
Issue number2
DOIs
StatePublished - Sep 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Keywords

  • Interface states
  • Metal - organic interface
  • Molecular film

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