TY - JOUR
T1 - The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts
AU - Shen, Chongfei
AU - Kahn, Antoine
N1 - Funding Information:
Support of this work by the MRSEC program of the National Science Foundation (DMR-9809483) and by the New Jersey Center for Optoelectronics is gratefully acknowledged. The authors thank J. Schwartz for useful discussions.
PY - 2001/9
Y1 - 2001/9
N2 - Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq3 and Al/Alq3 interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current - voltage measurements.
AB - Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq3 and Al/Alq3 interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current - voltage measurements.
KW - Interface states
KW - Metal - organic interface
KW - Molecular film
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U2 - 10.1016/S1566-1199(01)00015-5
DO - 10.1016/S1566-1199(01)00015-5
M3 - Article
AN - SCOPUS:0012535484
SN - 1566-1199
VL - 2
SP - 89
EP - 95
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 2
ER -