The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts

Chongfei Shen; Antoine Kahn

doi:10.1016/S1566-1199(01)00015-5

The role of interface states in controlling the electronic structure of Alq₃/reactive metal contacts

Chongfei Shen, Antoine Kahn

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq₃ and Al/Alq₃ interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current - voltage measurements.

Original language	English (US)
Pages (from-to)	89-95
Number of pages	7
Journal	Organic Electronics
Volume	2
Issue number	2
DOIs	https://doi.org/10.1016/S1566-1199(01)00015-5
State	Published - Sep 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

Interface states
Metal - organic interface
Molecular film

Access to Document

10.1016/S1566-1199(01)00015-5

Cite this

@article{9f52d9b462194e37b77bd7307a92553a,

title = "The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts",

abstract = "Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq3 and Al/Alq3 interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current - voltage measurements.",

keywords = "Interface states, Metal - organic interface, Molecular film",

author = "Chongfei Shen and Antoine Kahn",

note = "Funding Information: Support of this work by the MRSEC program of the National Science Foundation (DMR-9809483) and by the New Jersey Center for Optoelectronics is gratefully acknowledged. The authors thank J. Schwartz for useful discussions.",

year = "2001",

month = sep,

doi = "10.1016/S1566-1199(01)00015-5",

language = "English (US)",

volume = "2",

pages = "89--95",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts

AU - Shen, Chongfei

AU - Kahn, Antoine

N1 - Funding Information: Support of this work by the MRSEC program of the National Science Foundation (DMR-9809483) and by the New Jersey Center for Optoelectronics is gratefully acknowledged. The authors thank J. Schwartz for useful discussions.

PY - 2001/9

Y1 - 2001/9

N2 - Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq3 and Al/Alq3 interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current - voltage measurements.

AB - Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/ Alq3 and Al/Alq3 interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current - voltage measurements.

KW - Interface states

KW - Metal - organic interface

KW - Molecular film

UR - http://www.scopus.com/inward/record.url?scp=0012535484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012535484&partnerID=8YFLogxK

U2 - 10.1016/S1566-1199(01)00015-5

DO - 10.1016/S1566-1199(01)00015-5

M3 - Article

AN - SCOPUS:0012535484

SN - 1566-1199

VL - 2

SP - 89

EP - 95

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

IS - 2

ER -