The origin of low water vapor transmission rates through Al2 O3 / ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

J. Meyer, H. Schmidt, W. Kowalsky, T. Riedl, Antoine Kahn

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Abstract

This paper reports on thin film gas-diffusion barriers consisting of Al2 O3 / ZrO2 nanolaminates (NL) grown by low-temperature (80°C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2× 10-4 g/ (m 2 day), measured at 80°C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2 O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2 O3 / ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

Original languageEnglish (US)
Article number243308
JournalApplied Physics Letters
Volume96
Issue number24
DOIs
StatePublished - Jun 14 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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