This paper reports on thin film gas-diffusion barriers consisting of Al2 O3 / ZrO2 nanolaminates (NL) grown by low-temperature (80°C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2× 10-4 g/ (m 2 day), measured at 80°C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2 O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2 O3 / ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Jun 14 2010|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)