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The neutral silicon split-vacancy defect in diamond, a promising color center for quantum communication

  • Brendon C. Rose
  • , Ding Huang
  • , Alexei M. Tyryshkin
  • , Sorawis Sangtawesin
  • , Daniel J. Twitchen
  • , Matthew L. Markham
  • , Andrew M. Edmonds
  • , Adam Gali
  • , Alastair Stacey
  • , Wuyi Wang
  • , Ulrika D.Haenens Johansson
  • , Alexandre Zaitsev
  • , Stephen A. Lyon
  • , Nathalie P. de Leon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the neutral charge state of the interstitial silicon split-vacancy defect in diamond for use in quantum communication applications using pulsed electron spin resonance at X-Band magnetic fields (~3500 G) and confocal microscopy.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO_QELS 2017
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580279
DOIs
StatePublished - 2017
EventCLEO: QELS_Fundamental Science, CLEO_QELS 2017 - San Jose, United States
Duration: May 14 2017May 19 2017

Publication series

NameOptics InfoBase Conference Papers
VolumePart F42-CLEO_QELS 2017
ISSN (Electronic)2162-2701

Other

OtherCLEO: QELS_Fundamental Science, CLEO_QELS 2017
Country/TerritoryUnited States
CitySan Jose
Period5/14/175/19/17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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