The neutral silicon split-vacancy defect in diamond, a promising color center for quantum communication

Brendon C. Rose, Ding Huang, Alexei M. Tyryshkin, Sorawis Sangtawesin, Daniel J. Twitchen, Matthew L. Markham, Andrew M. Edmonds, Adam Gali, Alastair Stacey, Wuyi Wang, Ulrika D.Haenens Johansson, Alexandre Zaitsev, Stephen A. Lyon, Nathalie P. de Leon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the neutral charge state of the interstitial silicon split-vacancy defect in diamond for use in quantum communication applications using pulsed electron spin resonance at X-Band magnetic fields (~3500 G) and confocal microscopy.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO_QELS 2017
PublisherOSA - The Optical Society
ISBN (Print)9781943580279
DOIs
StatePublished - Jan 1 2017
EventCLEO: QELS_Fundamental Science, CLEO_QELS 2017 - San Jose, United States
Duration: May 14 2017May 19 2017

Publication series

NameOptics InfoBase Conference Papers
VolumePart F42-CLEO_QELS 2017

Other

OtherCLEO: QELS_Fundamental Science, CLEO_QELS 2017
CountryUnited States
CitySan Jose
Period5/14/175/19/17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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