The low temperature thermoelectric properties of CuxTiSe2-ySy

Y. S. Hor, R. J. Cava

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The low temperature thermoelectric properties of TiSe2, co-doped with Cu and S, are reported. Partial S substitution for Se changes the magnitude of the indirect bandgap, while the Cu-doping independently controls the n-type carrier concentration. The Seebeck coefficients are negative, in the range of -50 to -200 μV K-1, and the resistivities are 0.1-10 mΩ cm. The thermal conductivity for the sample with the largest thermoelectric power factor was found to be relatively low, 3-4 W m-1 K-1, and decreases with decreasing temperature. The thermoelectric efficiencies for the best materials found in this system, typified by Cu0.02TiSe1.7S0.3, were largest at 0.07 at 300 K and decreased to 0.01 at 75 K.

Original languageEnglish (US)
Pages (from-to)1375-1378
Number of pages4
JournalMaterials Research Bulletin
Issue number6
StatePublished - Jun 3 2009

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • A. Chalcogénides
  • A. Electronic materials
  • A. Layered compounds
  • D. Charge-density waves
  • D. Thermal conductivity


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