Abstract
The low temperature thermoelectric properties of TiSe2, co-doped with Cu and S, are reported. Partial S substitution for Se changes the magnitude of the indirect bandgap, while the Cu-doping independently controls the n-type carrier concentration. The Seebeck coefficients are negative, in the range of -50 to -200 μV K-1, and the resistivities are 0.1-10 mΩ cm. The thermal conductivity for the sample with the largest thermoelectric power factor was found to be relatively low, 3-4 W m-1 K-1, and decreases with decreasing temperature. The thermoelectric efficiencies for the best materials found in this system, typified by Cu0.02TiSe1.7S0.3, were largest at 0.07 at 300 K and decreased to 0.01 at 75 K.
Original language | English (US) |
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Pages (from-to) | 1375-1378 |
Number of pages | 4 |
Journal | Materials Research Bulletin |
Volume | 44 |
Issue number | 6 |
DOIs | |
State | Published - Jun 3 2009 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Keywords
- A. Chalcogénides
- A. Electronic materials
- A. Layered compounds
- D. Charge-density waves
- D. Thermal conductivity