The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

M. Grayson; D. C. Tsui; L. N. Pfeiffer; K. W. West; A. M. Chang

doi:10.1016/S1386-9477(01)00247-8

The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

M. Grayson
, D. C. Tsui
, L. N. Pfeiffer
, K. W. West
, A. M. Chang

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

Original language	English (US)
Pages (from-to)	80-83
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	12
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00247-8
State	Published - Jan 2002
Externally published	Yes
Event	14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Fractional quantum Hall effect
Resonant tunneling

Access to Document

10.1016/S1386-9477(01)00247-8

Cite this

@article{9def0372c5f945778463bee57bf691d8,

title = "The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge",

abstract = "New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.",

keywords = "Fractional quantum Hall effect, Resonant tunneling",

author = "M. Grayson and Tsui, \{D. C.\} and Pfeiffer, \{L. N.\} and West, \{K. W.\} and Chang, \{A. M.\}",

year = "2002",

month = jan,

doi = "10.1016/S1386-9477(01)00247-8",

language = "English (US)",

volume = "12",

pages = "80--83",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

note = "14th International Conference on the ; Conference date: 30-07-2001 Through 03-08-2001",

}

TY - JOUR

T1 - The lever-arm model

T2 - 14th International Conference on the

AU - Grayson, M.

AU - Tsui, D. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Chang, A. M.

PY - 2002/1

Y1 - 2002/1

N2 - New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

AB - New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

KW - Fractional quantum Hall effect

KW - Resonant tunneling

UR - https://www.scopus.com/pages/publications/0035239430

UR - https://www.scopus.com/pages/publications/0035239430#tab=citedBy

U2 - 10.1016/S1386-9477(01)00247-8

DO - 10.1016/S1386-9477(01)00247-8

M3 - Conference article

AN - SCOPUS:0035239430

SN - 1386-9477

VL - 12

SP - 80

EP - 83

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

Y2 - 30 December 2017 through 9 December 2017

ER -

The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this