Abstract
New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.
Original language | English (US) |
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Pages (from-to) | 80-83 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 12 |
Issue number | 1-4 |
DOIs | |
State | Published - Jan 2002 |
Externally published | Yes |
Event | 14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Keywords
- Fractional quantum Hall effect
- Resonant tunneling