The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)

M. K. Kelly; A. Kahn; Nacira Tache; au E. Colavita; G. Margaritondo

doi:10.1016/0038-1098(86)90025-6

The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)

M. K. Kelly
, A. Kahn
, Nacira Tache
, au E. Colavita
, G. Margaritondo

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The deposition of Al on both low-temperature and room-temperature cleaved GaAs(110) substrates results in Al-Ga exchange and in some Al clusterization. In contrast, the kinetics of the Shottky barrier formation process is dramatically different for low- and room-temperature substrates. This requires substantial modifications of the barrier formation model deduced from room-temperature experiments.

Original language	English (US)
Pages (from-to)	429-432
Number of pages	4
Journal	Solid State Communications
Volume	58
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(86)90025-6
State	Published - May 1986

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(86)90025-6

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@article{1ae97fccc71d45d9b7bebbb39876a35f,

title = "The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)",

abstract = "The deposition of Al on both low-temperature and room-temperature cleaved GaAs(110) substrates results in Al-Ga exchange and in some Al clusterization. In contrast, the kinetics of the Shottky barrier formation process is dramatically different for low- and room-temperature substrates. This requires substantial modifications of the barrier formation model deduced from room-temperature experiments.",

author = "Kelly, \{M. K.\} and A. Kahn and Nacira Tache and Colavita, \{au E.\} and G. Margaritondo",

note = "Funding Information: A comparison between RT and LNT substrate results reveals some similarities aeeDmpanied by several dramatic temperature effects. Among the similarities are the behavior of the Al2p core level vs. AI coverage and the occurrence of the A1-Ga exchange reaction. 6 The Al2p binding energy (corrected for band bending effects) exhibit three different stages of evolution both at RT and at LNT. These stages * Work supported by the ONR, the NSF (Grant DMR-84-06820), General Electric and Xerox Corporation.",

year = "1986",

month = may,

doi = "10.1016/0038-1098(86)90025-6",

language = "English (US)",

volume = "58",

pages = "429--432",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "7",

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TY - JOUR

T1 - The kinetics of Schottky barrier formation

T2 - Al on low-temperature GaAs(110)

AU - Kelly, M. K.

AU - Kahn, A.

AU - Tache, Nacira

AU - Colavita, au E.

AU - Margaritondo, G.

N1 - Funding Information: A comparison between RT and LNT substrate results reveals some similarities aeeDmpanied by several dramatic temperature effects. Among the similarities are the behavior of the Al2p core level vs. AI coverage and the occurrence of the A1-Ga exchange reaction. 6 The Al2p binding energy (corrected for band bending effects) exhibit three different stages of evolution both at RT and at LNT. These stages * Work supported by the ONR, the NSF (Grant DMR-84-06820), General Electric and Xerox Corporation.

PY - 1986/5

Y1 - 1986/5

N2 - The deposition of Al on both low-temperature and room-temperature cleaved GaAs(110) substrates results in Al-Ga exchange and in some Al clusterization. In contrast, the kinetics of the Shottky barrier formation process is dramatically different for low- and room-temperature substrates. This requires substantial modifications of the barrier formation model deduced from room-temperature experiments.

AB - The deposition of Al on both low-temperature and room-temperature cleaved GaAs(110) substrates results in Al-Ga exchange and in some Al clusterization. In contrast, the kinetics of the Shottky barrier formation process is dramatically different for low- and room-temperature substrates. This requires substantial modifications of the barrier formation model deduced from room-temperature experiments.

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UR - https://www.scopus.com/pages/publications/0022711452#tab=citedBy

U2 - 10.1016/0038-1098(86)90025-6

DO - 10.1016/0038-1098(86)90025-6

M3 - Article

AN - SCOPUS:0022711452

SN - 0038-1098

VL - 58

SP - 429

EP - 432

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)

Abstract

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