The deposition of Al on both low-temperature and room-temperature cleaved GaAs(110) substrates results in Al-Ga exchange and in some Al clusterization. In contrast, the kinetics of the Shottky barrier formation process is dramatically different for low- and room-temperature substrates. This requires substantial modifications of the barrier formation model deduced from room-temperature experiments.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry