@article{1ae97fccc71d45d9b7bebbb39876a35f,
title = "The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)",
abstract = "The deposition of Al on both low-temperature and room-temperature cleaved GaAs(110) substrates results in Al-Ga exchange and in some Al clusterization. In contrast, the kinetics of the Shottky barrier formation process is dramatically different for low- and room-temperature substrates. This requires substantial modifications of the barrier formation model deduced from room-temperature experiments.",
author = "Kelly, {M. K.} and A. Kahn and Nacira Tache and Colavita, {au E.} and G. Margaritondo",
note = "Funding Information: A comparison between RT and LNT substrate results reveals some similarities aeeDmpanied by several dramatic temperature effects. Among the similarities are the behavior of the Al2p core level vs. AI coverage and the occurrence of the A1-Ga exchange reaction. 6 The Al2p binding energy (corrected for band bending effects) exhibit three different stages of evolution both at RT and at LNT. These stages * Work supported by the ONR, the NSF (Grant DMR-84-06820), General Electric and Xerox Corporation.",
year = "1986",
month = may,
doi = "10.1016/0038-1098(86)90025-6",
language = "English (US)",
volume = "58",
pages = "429--432",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Ltd",
number = "7",
}