The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)

M. K. Kelly, A. Kahn, Nacira Tache, au E. Colavita, G. Margaritondo

Research output: Contribution to journalArticlepeer-review

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The deposition of Al on both low-temperature and room-temperature cleaved GaAs(110) substrates results in Al-Ga exchange and in some Al clusterization. In contrast, the kinetics of the Shottky barrier formation process is dramatically different for low- and room-temperature substrates. This requires substantial modifications of the barrier formation model deduced from room-temperature experiments.

Original languageEnglish (US)
Pages (from-to)429-432
Number of pages4
JournalSolid State Communications
Issue number7
StatePublished - May 1986

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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