The influence of molecular weight on the microstructure and thin film transistor characteristics of pBTTT polymers

Rick Hamilton, Clare Bailey, Warren Duffy, Martin Heeney, Maxim Shkunov, David Sparrowe, Steve Tierney, Lain McCulloch, R. Joseph Kline, Dean M. DeLongchamp, Michael Chabinyc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations


A common strategy to improve the electrical performance of organic field effect transistors is to optimize the charge carrier mobility of the semiconducting thin film. Polymer semiconductor transport properties have shown a dependence on the chain length, due principally to the strong influence of molecular weight on the thin film microstructure. In this work, we report on a study of the influence of increasing molecular weight of poly(2,5-bis(3- docecylthiophen-2-yl)thieno[3,2-6]thiophenes) (pBTTT-C12) on the polymer bulk thermal properties, thin film microstructure and the electrical performance of thin film field effect transistor devices. Clear differences can be observed within a number average molecular weight range of 8,000 - 18,000 Dalton. A Liquid crystalline phase was only observed at the highest molecular weight, different thin film morphology was observed within the molecular weight range, and the field effect mobility was shown to increase with increasing molecular weight.

Original languageEnglish (US)
Title of host publicationOrganic Field-Effect Transistors V
StatePublished - 2006
Externally publishedYes
EventOrganic Field-Effect Transistors V - San Diego, CA, United States
Duration: Aug 13 2006Aug 15 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceOrganic Field-Effect Transistors V
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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