The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neopentasilane

K. H. Chung, J. C. Sturm, E. Sanchez, K. K. Singh, S. Kuppurao

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The growth of epitaxy of silicon-carbon (Si1-yCy) alloy layers on (1 0 0) silicon substrates by chemical vapour deposition (CVD) with a novel precursor, neopentasilane, as the silicon source gas and methylsilane as the carbon source is reported. High quality Si 1-yCy alloy layers at growth rates of 18 nm min -1 and 13 nm min-1 for fully substitutional carbon levels of 1.8% and 2.1%, respectively, were achieved. The highest substitutional carbon level achieved was 2.6% (strained perpendicular lattice constant of 5.347 ) as determined by x-ray diffraction.

Original languageEnglish (US)
Article numberS37
Pages (from-to)S158-S160
JournalSemiconductor Science and Technology
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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