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The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications
W. Zheng, James Christopher Sturm, Claire F. Gmachl, T. Buyuklimanli, J. Marino, M. S. Denker, J. T. Mayer
Research output: Contribution to journal › Article › peer-review
1
Scopus
citations