The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng; James Christopher Sturm; Claire F. Gmachl; T. Buyuklimanli; J. Marino; M. S. Denker; J. T. Mayer

doi:10.1088/0268-1242/22/1/S44

The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng, James Christopher Sturm, Claire F. Gmachl, T. Buyuklimanli, J. Marino, M. S. Denker, J. T. Mayer

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s^-1.

Original language	English (US)
Article number	S44
Pages (from-to)	S188-S190
Journal	Semiconductor Science and Technology
Volume	22
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/22/1/S44
State	Published - Jan 1 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s-1.",

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AU - Zheng, W.

AU - Sturm, James Christopher

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AU - Buyuklimanli, T.

AU - Marino, J.

AU - Denker, M. S.

AU - Mayer, J. T.

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AB - A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s-1.

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The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

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