A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s-1.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry