The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng; James Christopher Sturm; Claire F. Gmachl; T. Buyuklimanli; J. Marino; M. S. Denker; J. T. Mayer

doi:10.1088/0268-1242/22/1/S44

The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng, James Christopher Sturm, Claire F. Gmachl, T. Buyuklimanli, J. Marino, M. S. Denker, J. T. Mayer

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s^-1.

Original language	English (US)
Article number	S44
Pages (from-to)	S188-S190
Journal	Semiconductor Science and Technology
Volume	22
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/22/1/S44
State	Published - Jan 1 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/22/1/S44

Cite this

@article{bb67bf4a16f048bab02f7d35537573f8,

title = "The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications",

abstract = "A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s-1.",

author = "W. Zheng and Sturm, {James Christopher} and Gmachl, {Claire F.} and T. Buyuklimanli and J. Marino and Denker, {M. S.} and Mayer, {J. T.}",

year = "2007",

month = jan,

day = "1",

doi = "10.1088/0268-1242/22/1/S44",

language = "English (US)",

volume = "22",

pages = "S188--S190",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

AU - Zheng, W.

AU - Sturm, James Christopher

AU - Gmachl, Claire F.

AU - Buyuklimanli, T.

AU - Marino, J.

AU - Denker, M. S.

AU - Mayer, J. T.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s-1.

AB - A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s-1.

UR - http://www.scopus.com/inward/record.url?scp=34247195632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247195632&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/22/1/S44

DO - 10.1088/0268-1242/22/1/S44

M3 - Article

AN - SCOPUS:34247195632

SN - 0268-1242

VL - 22

SP - S188-S190

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - S44

ER -

The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this