The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng, James Christopher Sturm, Claire F. Gmachl, T. Buyuklimanli, J. Marino, M. S. Denker, J. T. Mayer

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (∼2 nm/decade and ∼3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625 °C) compared to the SiGe layers (525 °C) to keep the growth rate of both layers in the range of 0.1 nm s-1.

Original languageEnglish (US)
Article numberS44
Pages (from-to)S188-S190
JournalSemiconductor Science and Technology
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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