The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs/AlGaAs quantum wells

B. M. Ashkinadze; E. Cohen; Arza Ron; E. Linder; L. N. Pfeiffer

doi:10.1016/0038-1101(95)00290-1

The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs/AlGaAs quantum wells

B. M. Ashkinadze, E. Cohen, Arza Ron, E. Linder, L. N. Pfeiffer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Modulation of the resonantly excited exciton photoluminescence of undoped GaAs/AlGaAs quantum wells is obtained in two ways: (a) by photoexcitation with an additional laser beam at above bandgap energies and (b) by microwave irradiation. At low temperatures the two types of modulation have an opposite effect on the PL lineshape. We show that photoexcitation generates separately localized electrons and holes, and their interaction with localized excitons accelerates exciton transfer from weakly into strongly localized states. The excess exciton energy is imparted to the localized electron (or hole). On the other hand, under microwave modulation, free hot electrons activate localized excitons into high energy states and the exciton spectral diffusion towards deeper states is slowed down.

Original language	English (US)
Pages (from-to)	561-565
Number of pages	5
Journal	Solid-State Electronics
Volume	40
Issue number	1-8
DOIs	https://doi.org/10.1016/0038-1101(95)00290-1
State	Published - 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(95)00290-1

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@article{2a4c294b41eb490ebdfe9be5c9507c91,

title = "The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs/AlGaAs quantum wells",

abstract = "Modulation of the resonantly excited exciton photoluminescence of undoped GaAs/AlGaAs quantum wells is obtained in two ways: (a) by photoexcitation with an additional laser beam at above bandgap energies and (b) by microwave irradiation. At low temperatures the two types of modulation have an opposite effect on the PL lineshape. We show that photoexcitation generates separately localized electrons and holes, and their interaction with localized excitons accelerates exciton transfer from weakly into strongly localized states. The excess exciton energy is imparted to the localized electron (or hole). On the other hand, under microwave modulation, free hot electrons activate localized excitons into high energy states and the exciton spectral diffusion towards deeper states is slowed down.",

author = "Ashkinadze, {B. M.} and E. Cohen and Arza Ron and E. Linder and Pfeiffer, {L. N.}",

year = "1996",

doi = "10.1016/0038-1101(95)00290-1",

language = "English (US)",

volume = "40",

pages = "561--565",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1-8",

}

TY - JOUR

T1 - The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs/AlGaAs quantum wells

AU - Ashkinadze, B. M.

AU - Cohen, E.

AU - Ron, Arza

AU - Linder, E.

AU - Pfeiffer, L. N.

PY - 1996

Y1 - 1996

N2 - Modulation of the resonantly excited exciton photoluminescence of undoped GaAs/AlGaAs quantum wells is obtained in two ways: (a) by photoexcitation with an additional laser beam at above bandgap energies and (b) by microwave irradiation. At low temperatures the two types of modulation have an opposite effect on the PL lineshape. We show that photoexcitation generates separately localized electrons and holes, and their interaction with localized excitons accelerates exciton transfer from weakly into strongly localized states. The excess exciton energy is imparted to the localized electron (or hole). On the other hand, under microwave modulation, free hot electrons activate localized excitons into high energy states and the exciton spectral diffusion towards deeper states is slowed down.

AB - Modulation of the resonantly excited exciton photoluminescence of undoped GaAs/AlGaAs quantum wells is obtained in two ways: (a) by photoexcitation with an additional laser beam at above bandgap energies and (b) by microwave irradiation. At low temperatures the two types of modulation have an opposite effect on the PL lineshape. We show that photoexcitation generates separately localized electrons and holes, and their interaction with localized excitons accelerates exciton transfer from weakly into strongly localized states. The excess exciton energy is imparted to the localized electron (or hole). On the other hand, under microwave modulation, free hot electrons activate localized excitons into high energy states and the exciton spectral diffusion towards deeper states is slowed down.

UR - http://www.scopus.com/inward/record.url?scp=0029714485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029714485&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(95)00290-1

DO - 10.1016/0038-1101(95)00290-1

M3 - Article

AN - SCOPUS:0029714485

SN - 0038-1101

VL - 40

SP - 561

EP - 565

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1-8

ER -

The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs/AlGaAs quantum wells

Abstract

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