The Effects of Base Dopant Outdiffusion and Undoped Si1-xGexJunction Spacer Layers in Si/Si1_xGex /Si Heterojunction Bipolar Transistors

E. J. Prinz, P. M. Garone, P. V. Schwartz, X. Xiao, James C. Sturm

Research output: Contribution to journalArticle

88 Scopus citations

Abstract

The effects of base dopant outdiffusion and nominally undoped Si1_xGex spacer layers at the junction interfaces of Si/Si1_xGex/Si n-p-n heterojunction bipolar transistors (HBT’s) have been studied. It has been found that small amounts of boron outdiffusion from heavily doped bases or nonabrupt interfaces cause parasitic barriers in the conduction band, which drastically reduce the collector current enhancement in the HBT’s. Undoped interface spacers can remove the parasitic barriers resulting in a strongly improved collector current enhancement.

Original languageEnglish (US)
Pages (from-to)42-44
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number2
DOIs
StatePublished - Feb 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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