The effect of injection barrier thickness and doping level on a λ ∼ 8 μm quantum cascade structure

Scott S. Howard, Daniel P. Howard, Tiffany Ko, Deborah L. Sivco, Claire F. Gmachl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For a high-performance quantum cascade laser structure, a 50% reduction in doping level and 33% reduction in injection barrier thickness yields 5 times stronger luminescence, 20% smaller optical transition width, and improved current-voltage characteristics.

Original languageEnglish (US)
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Other

OtherConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period5/4/085/9/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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