The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure

Scott S. Howard; Daniel P. Howard; Tiffany Ko; Deborah L. Sivco; Claire F. Gmachl

doi:10.1109/QELS.2008.4552479

The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure

Scott S. Howard, Daniel P. Howard, Tiffany Ko, Deborah L. Sivco, Claire F. Gmachl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

For a high-performance quantum cascade laser structure, a 50% reduction in doping level and 33% reduction in injection barrier thickness yields 5 times stronger luminescence, 20% smaller optical transition width, and improved current-voltage characteristics.

Original language	English (US)
Title of host publication	2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
DOIs	https://doi.org/10.1109/QELS.2008.4552479
State	Published - 2008
Event	Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States Duration: May 4 2008 → May 9 2008

Publication series

Name	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Other

Other	Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
Country/Territory	United States
City	San Jose, CA
Period	5/4/08 → 5/9/08

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1109/QELS.2008.4552479

Cite this

Howard, S. S., Howard, D. P., Ko, T., Sivco, D. L., & Gmachl, C. F. (2008). The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure. In 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS Article 4552479 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2008.4552479

@inproceedings{c8e07a01090a4fd7837f8b1db4807caa,

title = "The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure",

abstract = "For a high-performance quantum cascade laser structure, a 50\% reduction in doping level and 33\% reduction in injection barrier thickness yields 5 times stronger luminescence, 20\% smaller optical transition width, and improved current-voltage characteristics.",

author = "Howard, \{Scott S.\} and Howard, \{Daniel P.\} and Tiffany Ko and Sivco, \{Deborah L.\} and Gmachl, \{Claire F.\}",

year = "2008",

doi = "10.1109/QELS.2008.4552479",

language = "English (US)",

isbn = "1557528594",

series = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

booktitle = "2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS",

note = "Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 ; Conference date: 04-05-2008 Through 09-05-2008",

}

Howard, SS, Howard, DP, Ko, T, Sivco, DL & Gmachl, CF 2008, The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure. in 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS., 4552479, Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008, San Jose, CA, United States, 5/4/08. https://doi.org/10.1109/QELS.2008.4552479

The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure. / Howard, Scott S.; Howard, Daniel P.; Ko, Tiffany et al.
2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS. 2008. 4552479 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure

AU - Howard, Scott S.

AU - Howard, Daniel P.

AU - Ko, Tiffany

AU - Sivco, Deborah L.

AU - Gmachl, Claire F.

PY - 2008

Y1 - 2008

N2 - For a high-performance quantum cascade laser structure, a 50% reduction in doping level and 33% reduction in injection barrier thickness yields 5 times stronger luminescence, 20% smaller optical transition width, and improved current-voltage characteristics.

AB - For a high-performance quantum cascade laser structure, a 50% reduction in doping level and 33% reduction in injection barrier thickness yields 5 times stronger luminescence, 20% smaller optical transition width, and improved current-voltage characteristics.

UR - https://www.scopus.com/pages/publications/51349132806

UR - https://www.scopus.com/inward/citedby.url?scp=51349132806&partnerID=8YFLogxK

U2 - 10.1109/QELS.2008.4552479

DO - 10.1109/QELS.2008.4552479

M3 - Conference contribution

AN - SCOPUS:51349132806

SN - 1557528594

SN - 9781557528599

T3 - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

BT - 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS

T2 - Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008

Y2 - 4 May 2008 through 9 May 2008

ER -

Howard SS, Howard DP, Ko T, Sivco DL, Gmachl CF. The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure. In 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS. 2008. 4552479. (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). doi: 10.1109/QELS.2008.4552479

The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure

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