The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure

Scott S. Howard, Daniel P. Howard, Tiffany Ko, Deborah L. Sivco, Claire F. Gmachl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For a high-performance quantum cascade laser structure, a 50% reduction in doping level and 33% reduction in injection barrier thickness yields 5 times stronger luminescence, 20% smaller optical transition width, and improved current-voltage characteristics.

Original languageEnglish (US)
Title of host publication2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
DOIs
StatePublished - Sep 15 2008
EventConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Publication series

NameConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Other

OtherConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
CountryUnited States
CitySan Jose, CA
Period5/4/085/9/08

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Howard, S. S., Howard, D. P., Ko, T., Sivco, D. L., & Gmachl, C. F. (2008). The effect of injection barrier thickness and doping level on a λ - 8 μm quantum cascade structure. In 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS [4552479] (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2008.4552479