The surface segregation of phosphorus in relaxed Si 0.7Ge 0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Oct 1 2012|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)