The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition

Jiun Yun Li; Chiao Ti Huang; James C. Sturm

doi:10.1063/1.4757123

The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si _0.7Ge _0.3 films by rapid thermal chemical vapor deposition

Jiun Yun Li, Chiao Ti Huang, James C. Sturm

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6 Scopus citations

Abstract

The surface segregation of phosphorus in relaxed Si _0.7Ge _0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.

Original language	English (US)
Article number	142112
Journal	Applied Physics Letters
Volume	101
Issue number	14
DOIs	https://doi.org/10.1063/1.4757123
State	Published - Oct 1 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4757123

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title = "The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition",

abstract = "The surface segregation of phosphorus in relaxed Si 0.7Ge 0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.",

author = "Li, {Jiun Yun} and Huang, {Chiao Ti} and Sturm, {James C.}",

note = "Funding Information: This work at Princeton University was supported by DARPA (Project No. HR0011-09-1-0007), ARO (W911NF-09-10498), and the NSF MRSEC Program through the Princeton Center for Complex Materials (DMR-0819860). We also thank Amberwave Semiconductor for supplying the relaxed SiGe buffers. 0.7 0.3",

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AU - Li, Jiun Yun

AU - Huang, Chiao Ti

AU - Sturm, James C.

N1 - Funding Information: This work at Princeton University was supported by DARPA (Project No. HR0011-09-1-0007), ARO (W911NF-09-10498), and the NSF MRSEC Program through the Princeton Center for Complex Materials (DMR-0819860). We also thank Amberwave Semiconductor for supplying the relaxed SiGe buffers. 0.7 0.3

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N2 - The surface segregation of phosphorus in relaxed Si 0.7Ge 0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.

AB - The surface segregation of phosphorus in relaxed Si 0.7Ge 0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.

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The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si _0.7Ge _0.3 films by rapid thermal chemical vapor deposition

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