The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition

Jiun Yun Li; Chiao Ti Huang; James C. Sturm

doi:10.1063/1.4757123

The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si _0.7Ge _0.3 films by rapid thermal chemical vapor deposition

Jiun Yun Li, Chiao Ti Huang, James C. Sturm

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The surface segregation of phosphorus in relaxed Si _0.7Ge _0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.

Original language	English (US)
Article number	142112
Journal	Applied Physics Letters
Volume	101
Issue number	14
DOIs	https://doi.org/10.1063/1.4757123
State	Published - Oct 1 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4757123

Cite this

@article{b1bba82b48fc4c4ca3c0353742fea88c,

title = "The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition",

abstract = "The surface segregation of phosphorus in relaxed Si 0.7Ge 0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.",

author = "Li, {Jiun Yun} and Huang, {Chiao Ti} and Sturm, {James C.}",

note = "Funding Information: This work at Princeton University was supported by DARPA (Project No. HR0011-09-1-0007), ARO (W911NF-09-10498), and the NSF MRSEC Program through the Princeton Center for Complex Materials (DMR-0819860). We also thank Amberwave Semiconductor for supplying the relaxed SiGe buffers. 0.7 0.3",

year = "2012",

month = oct,

day = "1",

doi = "10.1063/1.4757123",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition

AU - Li, Jiun Yun

AU - Huang, Chiao Ti

AU - Sturm, James C.

N1 - Funding Information: This work at Princeton University was supported by DARPA (Project No. HR0011-09-1-0007), ARO (W911NF-09-10498), and the NSF MRSEC Program through the Princeton Center for Complex Materials (DMR-0819860). We also thank Amberwave Semiconductor for supplying the relaxed SiGe buffers. 0.7 0.3

PY - 2012/10/1

Y1 - 2012/10/1

N2 - The surface segregation of phosphorus in relaxed Si 0.7Ge 0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.

AB - The surface segregation of phosphorus in relaxed Si 0.7Ge 0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.

UR - http://www.scopus.com/inward/record.url?scp=84867533831&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867533831&partnerID=8YFLogxK

U2 - 10.1063/1.4757123

DO - 10.1063/1.4757123

M3 - Article

AN - SCOPUS:84867533831

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142112

ER -

The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si _0.7Ge _0.3 films by rapid thermal chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this