The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases

Jiun Yun Li, James C. Sturm

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The dependence of band-to-band tunneling in p+-Si 1-xGex/n+-Si1-xGex homojunctions on Ge fraction and electric field is investigated in the range 2-3×108V/m. Negative differential resistance (NDR) in forward bias is observed for each device with the highest peak tunneling-current density of 8.2 kA/cm2 without any postannealing step. Reverse-biased band-to-band tunneling, as relevant for tunneling field-effect transistors, is also measured. Tunneling via junction defects can mask band-to-band tunneling and the observation of NDR at forward bias confirms negligible tunneling via those defects. Both forward-biased and reverse-biased data are compared with models versus electric field and Ge fraction.

Original languageEnglish (US)
Article number6547702
Pages (from-to)2479-2484
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number8
DOIs
StatePublished - Aug 5 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Band-to-band tunneling (BTBT)
  • SiGe
  • chemical vapor deposition (CVD)
  • negative differential resistance (NDR)
  • tunnel diode
  • tunneling field-effect transistor (TFET)

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