The effect of carbon on the valence band offset of compressively strained Si1-X-YGexCy/(100) Si heterojunctions

C. L. Chang; A. St. Amour; J. C. Sturm

doi:10.1063/1.118615

The effect of carbon on the valence band offset of compressively strained Si_1-X-YGe_xC_y/(100) Si heterojunctions

C. L. Chang, A. St. Amour, J. C. Sturm

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Abstract

Capacitance-voltage measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si_1-X-YGe_XC_Y/(100) Si heterojunctions grown by rapid thermal chemical vapor deposition with substitutional C levels from 0% to 2.5%. The valence band offset between Si_1-X-YGe_XC_Y and unstrained (100) Si decreases at a rate of 20-26 meV per % C. Our work indicates that the change in the bandgap of Si_1-X-YGe_XC_Y as carbon is added is entirely accommmodated in the valence band.

Original language	English (US)
Pages (from-to)	1557-1559
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	12
DOIs	https://doi.org/10.1063/1.118615
State	Published - Mar 24 1997

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.118615

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title = "The effect of carbon on the valence band offset of compressively strained Si1-X-YGexCy/(100) Si heterojunctions",

abstract = "Capacitance-voltage measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1-X-YGeXCY/(100) Si heterojunctions grown by rapid thermal chemical vapor deposition with substitutional C levels from 0% to 2.5%. The valence band offset between Si1-X-YGeXCY and unstrained (100) Si decreases at a rate of 20-26 meV per % C. Our work indicates that the change in the bandgap of Si1-X-YGeXCY as carbon is added is entirely accommmodated in the valence band.",

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T1 - The effect of carbon on the valence band offset of compressively strained Si1-X-YGexCy/(100) Si heterojunctions

AU - Chang, C. L.

AU - St. Amour, A.

AU - Sturm, J. C.

PY - 1997/3/24

Y1 - 1997/3/24

N2 - Capacitance-voltage measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1-X-YGeXCY/(100) Si heterojunctions grown by rapid thermal chemical vapor deposition with substitutional C levels from 0% to 2.5%. The valence band offset between Si1-X-YGeXCY and unstrained (100) Si decreases at a rate of 20-26 meV per % C. Our work indicates that the change in the bandgap of Si1-X-YGeXCY as carbon is added is entirely accommmodated in the valence band.

AB - Capacitance-voltage measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1-X-YGeXCY/(100) Si heterojunctions grown by rapid thermal chemical vapor deposition with substitutional C levels from 0% to 2.5%. The valence band offset between Si1-X-YGeXCY and unstrained (100) Si decreases at a rate of 20-26 meV per % C. Our work indicates that the change in the bandgap of Si1-X-YGeXCY as carbon is added is entirely accommmodated in the valence band.

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The effect of carbon on the valence band offset of compressively strained Si_1-X-YGe_xC_y/(100) Si heterojunctions

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