The effect of carbon on the valence band offset of compressively strained Si1-X-YGexCy/(100) Si heterojunctions

C. L. Chang, A. St. Amour, J. C. Sturm

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Abstract

Capacitance-voltage measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1-X-YGeXCY/(100) Si heterojunctions grown by rapid thermal chemical vapor deposition with substitutional C levels from 0% to 2.5%. The valence band offset between Si1-X-YGeXCY and unstrained (100) Si decreases at a rate of 20-26 meV per % C. Our work indicates that the change in the bandgap of Si1-X-YGeXCY as carbon is added is entirely accommmodated in the valence band.

Original languageEnglish (US)
Pages (from-to)1557-1559
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number12
DOIs
StatePublished - Mar 24 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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