The effect of base-emitter spacers and strain-dependent densities of states in Si/Si1-xGex/Si heterojunction bipolar transistors

E. J. Prinz; P. M. Garone; P. V. Schwartz; X. Xiao; J. C. Sturm

The effect of base-emitter spacers and strain-dependent densities of states in Si/Si_1-xGe_x/Si heterojunction bipolar transistors

E. J. Prinz, P. M. Garone, P. V. Schwartz, X. Xiao, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

Abstract

The authors describe two effects which can significantly affect the transport of electrons across the base region of Si-Si_1-xGe_x-Si heterojunction bipolar transistors and limit the effective bandgap reduction. These effects are the formation of a parasitic electron barrier due to a nonabrupt base-emitter junction and the reduction of the density of states in the Si_1-xGe_x base layer because of the anisotropic strain. Junction spacers have been found to eliminate the parasitic barriers for optimum devices. For optimum device performance it is necessary to keep the Si-Si_1-xGe_x interfaces in the junction depletion region. The strain dependence of the densities of states in the base region lowers collector current.

Original language	English (US)
Pages (from-to)	639-642
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1989
Event	1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA Duration: Dec 3 1989 → Dec 6 1989

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

@article{3c960895e384476589895c6ebe1543ed,

title = "The effect of base-emitter spacers and strain-dependent densities of states in Si/Si1-xGex/Si heterojunction bipolar transistors",

abstract = "The authors describe two effects which can significantly affect the transport of electrons across the base region of Si-Si1-xGex-Si heterojunction bipolar transistors and limit the effective bandgap reduction. These effects are the formation of a parasitic electron barrier due to a nonabrupt base-emitter junction and the reduction of the density of states in the Si1-xGex base layer because of the anisotropic strain. Junction spacers have been found to eliminate the parasitic barriers for optimum devices. For optimum device performance it is necessary to keep the Si-Si1-xGex interfaces in the junction depletion region. The strain dependence of the densities of states in the base region lowers collector current.",

author = "Prinz, {E. J.} and Garone, {P. M.} and Schwartz, {P. V.} and X. Xiao and Sturm, {J. C.}",

year = "1989",

language = "English (US)",

pages = "639--642",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1989 International Electron Devices Meeting - Technical Digest ; Conference date: 03-12-1989 Through 06-12-1989",

}

TY - JOUR

T1 - The effect of base-emitter spacers and strain-dependent densities of states in Si/Si1-xGex/Si heterojunction bipolar transistors

AU - Prinz, E. J.

AU - Garone, P. M.

AU - Schwartz, P. V.

AU - Xiao, X.

AU - Sturm, J. C.

PY - 1989

Y1 - 1989

N2 - The authors describe two effects which can significantly affect the transport of electrons across the base region of Si-Si1-xGex-Si heterojunction bipolar transistors and limit the effective bandgap reduction. These effects are the formation of a parasitic electron barrier due to a nonabrupt base-emitter junction and the reduction of the density of states in the Si1-xGex base layer because of the anisotropic strain. Junction spacers have been found to eliminate the parasitic barriers for optimum devices. For optimum device performance it is necessary to keep the Si-Si1-xGex interfaces in the junction depletion region. The strain dependence of the densities of states in the base region lowers collector current.

AB - The authors describe two effects which can significantly affect the transport of electrons across the base region of Si-Si1-xGex-Si heterojunction bipolar transistors and limit the effective bandgap reduction. These effects are the formation of a parasitic electron barrier due to a nonabrupt base-emitter junction and the reduction of the density of states in the Si1-xGex base layer because of the anisotropic strain. Junction spacers have been found to eliminate the parasitic barriers for optimum devices. For optimum device performance it is necessary to keep the Si-Si1-xGex interfaces in the junction depletion region. The strain dependence of the densities of states in the base region lowers collector current.

UR - http://www.scopus.com/inward/record.url?scp=0024919176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024919176&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024919176

SN - 0163-1918

SP - 639

EP - 642

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1989 International Electron Devices Meeting - Technical Digest

Y2 - 3 December 1989 through 6 December 1989

ER -

The effect of base-emitter spacers and strain-dependent densities of states in Si/Si_1-xGe_x/Si heterojunction bipolar transistors

Abstract

All Science Journal Classification (ASJC) codes

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