The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy

Charles M. Brooks; Rajiv Misra; Julia A. Mundy; Lei A. Zhang; Brian S. Holinsworth; Kenneth R. O'Neal; Tassilo Heeg; Willi Zander; J. Schubert; Janice L. Musfeldt; Zi Kui Liu; David A. Muller; Peter Schiffer; Darrell G. Schlom

doi:10.1063/1.4755765

The adsorption-controlled growth of LuFe₂O₄ by molecular-beam epitaxy

Charles M. Brooks
, Rajiv Misra
, Julia A. Mundy
, Lei A. Zhang
, Brian S. Holinsworth
, Kenneth R. O'Neal
, Tassilo Heeg
, Willi Zander
, J. Schubert
, Janice L. Musfeldt
, Zi Kui Liu
, David A. Muller
, Peter Schiffer
, Darrell G. Schlom

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

We report the growth of single-phase (0001)-oriented epitaxial films of the purported electronically driven multiferroic, LuFe₂O₄, on (111) MgAl₂O₄, (111) MgO, and (0001) 6H-SiC substrates. Film stoichiometry was regulated using an adsorption-controlled growth process by depositing LuFe₂O₄ in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals reaction-free film-substrate interfaces. The magnetization increases rapidly below 240K, consistent with the paramagnetic-to-ferrimagnetic phase transition of bulk LuFe₂O₄. In addition to the ∼0.35eV indirect band gap, optical spectroscopy reveals a 3.4eV direct band gap at the gamma point.

Original language	English (US)
Article number	132907
Journal	Applied Physics Letters
Volume	101
Issue number	13
DOIs	https://doi.org/10.1063/1.4755765
State	Published - Sep 24 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4755765

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@article{4e8fe416b5fe4db5a9f302ba73478aa2,

title = "The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy",

abstract = "We report the growth of single-phase (0001)-oriented epitaxial films of the purported electronically driven multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates. Film stoichiometry was regulated using an adsorption-controlled growth process by depositing LuFe2O4 in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals reaction-free film-substrate interfaces. The magnetization increases rapidly below 240K, consistent with the paramagnetic-to-ferrimagnetic phase transition of bulk LuFe2O4. In addition to the ∼0.35eV indirect band gap, optical spectroscopy reveals a 3.4eV direct band gap at the gamma point.",

author = "Brooks, \{Charles M.\} and Rajiv Misra and Mundy, \{Julia A.\} and Zhang, \{Lei A.\} and Holinsworth, \{Brian S.\} and O'Neal, \{Kenneth R.\} and Tassilo Heeg and Willi Zander and J. Schubert and Musfeldt, \{Janice L.\} and Liu, \{Zi Kui\} and Muller, \{David A.\} and Peter Schiffer and Schlom, \{Darrell G.\}",

note = "Funding Information: Research supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences, and Engineering under Award Nos. DE-SC0002334 (sample synthesis and characterization) and DE-FG02-01ER45885 (spectroscopy). C.M.B. acknowledges stipend support from the National Science Foundation through the MRSEC program (DMR-0820404). J.A.M. acknowledges financial support from a National Defense Science \& Engineering Graduate Fellowship. Electron microscopy facility support through the NSF MRSEC program (DMR 1120296) and NSF IMR-0417392. We thank P. Chen for useful discussions.",

year = "2012",

month = sep,

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doi = "10.1063/1.4755765",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

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T1 - The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy

AU - Brooks, Charles M.

AU - Misra, Rajiv

AU - Mundy, Julia A.

AU - Zhang, Lei A.

AU - Holinsworth, Brian S.

AU - O'Neal, Kenneth R.

AU - Heeg, Tassilo

AU - Zander, Willi

AU - Schubert, J.

AU - Musfeldt, Janice L.

AU - Liu, Zi Kui

AU - Muller, David A.

AU - Schiffer, Peter

AU - Schlom, Darrell G.

N1 - Funding Information: Research supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences, and Engineering under Award Nos. DE-SC0002334 (sample synthesis and characterization) and DE-FG02-01ER45885 (spectroscopy). C.M.B. acknowledges stipend support from the National Science Foundation through the MRSEC program (DMR-0820404). J.A.M. acknowledges financial support from a National Defense Science & Engineering Graduate Fellowship. Electron microscopy facility support through the NSF MRSEC program (DMR 1120296) and NSF IMR-0417392. We thank P. Chen for useful discussions.

PY - 2012/9/24

Y1 - 2012/9/24

N2 - We report the growth of single-phase (0001)-oriented epitaxial films of the purported electronically driven multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates. Film stoichiometry was regulated using an adsorption-controlled growth process by depositing LuFe2O4 in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals reaction-free film-substrate interfaces. The magnetization increases rapidly below 240K, consistent with the paramagnetic-to-ferrimagnetic phase transition of bulk LuFe2O4. In addition to the ∼0.35eV indirect band gap, optical spectroscopy reveals a 3.4eV direct band gap at the gamma point.

AB - We report the growth of single-phase (0001)-oriented epitaxial films of the purported electronically driven multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates. Film stoichiometry was regulated using an adsorption-controlled growth process by depositing LuFe2O4 in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals reaction-free film-substrate interfaces. The magnetization increases rapidly below 240K, consistent with the paramagnetic-to-ferrimagnetic phase transition of bulk LuFe2O4. In addition to the ∼0.35eV indirect band gap, optical spectroscopy reveals a 3.4eV direct band gap at the gamma point.

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JF - Applied Physics Letters

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M1 - 132907

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The adsorption-controlled growth of LuFe₂O₄ by molecular-beam epitaxy

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