Terahertz-induced optical emission of photoexcited undoped GaAs quantum wells

K. Shinokita; H. Hirori; K. Tanaka; T. Mochizuki; C. Kim; H. Akiyama; L. N. Pfeiffer; K. W. West

doi:10.1103/PhysRevLett.111.067401

Terahertz-induced optical emission of photoexcited undoped GaAs quantum wells

K. Shinokita, H. Hirori, K. Tanaka, T. Mochizuki, C. Kim, H. Akiyama, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Intense terahertz (THz) pulse induces photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10 000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the 1 ps period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.

Original language	English (US)
Article number	067401
Journal	Physical review letters
Volume	111
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.111.067401
State	Published - Aug 6 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.111.067401

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title = "Terahertz-induced optical emission of photoexcited undoped GaAs quantum wells",

abstract = "Intense terahertz (THz) pulse induces photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10 000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the 1 ps period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.",

author = "K. Shinokita and H. Hirori and K. Tanaka and T. Mochizuki and C. Kim and H. Akiyama and Pfeiffer, {L. N.} and West, {K. W.}",

year = "2013",

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doi = "10.1103/PhysRevLett.111.067401",

language = "English (US)",

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AU - Shinokita, K.

AU - Hirori, H.

AU - Tanaka, K.

AU - Mochizuki, T.

AU - Kim, C.

AU - Akiyama, H.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2013/8/6

Y1 - 2013/8/6

N2 - Intense terahertz (THz) pulse induces photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10 000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the 1 ps period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.

AB - Intense terahertz (THz) pulse induces photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10 000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the 1 ps period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.

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Terahertz-induced optical emission of photoexcited undoped GaAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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