Terahertz emission from electric field singularities in biased semiconductors

I. Brener; D. Dykaar; A. Frommer; L. N. Pfeiffer; J. Lopata; J. Wynn; K. West; M. C. Nuss

doi:10.1364/OL.21.001924

Terahertz emission from electric field singularities in biased semiconductors

I. Brener, D. Dykaar, A. Frommer, L. N. Pfeiffer, J. Lopata, J. Wynn, K. West, M. C. Nuss

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87 Scopus citations

Abstract

We use electric field singularities in biased metal semiconductor microstructures to enhance the generation of terahertz (THz) radiation from semiconductors. We find that, regardless of the mechanism that is responsible for enhanced THz emission near the anode, singular electric fields near sharp anode features will enhance this emission by as much as an order of magnitude. We show scanning THz measurements of several of these structures and discuss the physical mechanism responsible for this enhanced emission. A new family of more efficient terahertz emitters based on these effects can be designed that will improve the dynamic range of THz imaging and spectroscopy systems.

Original language	English (US)
Pages (from-to)	1924-1926
Number of pages	3
Journal	Optics Letters
Volume	21
Issue number	23
DOIs	https://doi.org/10.1364/OL.21.001924
State	Published - Dec 1 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OL.21.001924

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@article{5c0699f99e82474480db1ee862d8dad7,

title = "Terahertz emission from electric field singularities in biased semiconductors",

abstract = "We use electric field singularities in biased metal semiconductor microstructures to enhance the generation of terahertz (THz) radiation from semiconductors. We find that, regardless of the mechanism that is responsible for enhanced THz emission near the anode, singular electric fields near sharp anode features will enhance this emission by as much as an order of magnitude. We show scanning THz measurements of several of these structures and discuss the physical mechanism responsible for this enhanced emission. A new family of more efficient terahertz emitters based on these effects can be designed that will improve the dynamic range of THz imaging and spectroscopy systems.",

author = "I. Brener and D. Dykaar and A. Frommer and Pfeiffer, \{L. N.\} and J. Lopata and J. Wynn and K. West and Nuss, \{M. C.\}",

year = "1996",

month = dec,

day = "1",

doi = "10.1364/OL.21.001924",

language = "English (US)",

volume = "21",

pages = "1924--1926",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optica Publishing Group (formerly OSA)",

number = "23",

}

TY - JOUR

T1 - Terahertz emission from electric field singularities in biased semiconductors

AU - Brener, I.

AU - Dykaar, D.

AU - Frommer, A.

AU - Pfeiffer, L. N.

AU - Lopata, J.

AU - Wynn, J.

AU - West, K.

AU - Nuss, M. C.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We use electric field singularities in biased metal semiconductor microstructures to enhance the generation of terahertz (THz) radiation from semiconductors. We find that, regardless of the mechanism that is responsible for enhanced THz emission near the anode, singular electric fields near sharp anode features will enhance this emission by as much as an order of magnitude. We show scanning THz measurements of several of these structures and discuss the physical mechanism responsible for this enhanced emission. A new family of more efficient terahertz emitters based on these effects can be designed that will improve the dynamic range of THz imaging and spectroscopy systems.

AB - We use electric field singularities in biased metal semiconductor microstructures to enhance the generation of terahertz (THz) radiation from semiconductors. We find that, regardless of the mechanism that is responsible for enhanced THz emission near the anode, singular electric fields near sharp anode features will enhance this emission by as much as an order of magnitude. We show scanning THz measurements of several of these structures and discuss the physical mechanism responsible for this enhanced emission. A new family of more efficient terahertz emitters based on these effects can be designed that will improve the dynamic range of THz imaging and spectroscopy systems.

UR - https://www.scopus.com/pages/publications/0000797332

UR - https://www.scopus.com/inward/citedby.url?scp=0000797332&partnerID=8YFLogxK

U2 - 10.1364/OL.21.001924

DO - 10.1364/OL.21.001924

M3 - Article

AN - SCOPUS:0000797332

SN - 0146-9592

VL - 21

SP - 1924

EP - 1926

JO - Optics Letters

JF - Optics Letters

IS - 23

ER -

Terahertz emission from electric field singularities in biased semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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