Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width

S. Y. Chou, Y. Liu, P. B. Fischer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic measurement using a femtosecond pulse laser and a 50-GHz sampling oscilloscope showed that the detectors' speed is much faster than that of the measuring system. Monte Carlo simulations show that, for an MSM photodetector with 25-nm finger spacing, its intrinsic and extrinsic impulse responses are 0.16 ps and 0.25 ps, respectively, and its cut-off frequency is over 1 THz. Finally, the scaling rules in achieving ultra-high-speed MSM photodetectors are discussed.

Original languageEnglish (US)
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
StatePublished - 1991
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: Dec 8 1991Dec 11 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


OtherInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • Fingers
  • Gallium arsenide
  • Laser beam cutting
  • Molecular beam epitaxial growth
  • Optical pulses
  • Oscilloscopes
  • Photodetectors
  • Pulse measurements
  • Sampling methods
  • Velocity measurement


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