Abstract
Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic measurement using a femtosecond pulse laser and a 50-GHz sampling oscilloscope showed that the detectors' speed is much faster than that of the measuring system. Monte Carlo simulations show that, for an MSM photodetector with 25-nm finger spacing, its intrinsic and extrinsic impulse responses are 0.16 ps and 0.25 ps, respectively, and its cut-off frequency is over 1 THz. Finally, the scaling rules in achieving ultra-high-speed MSM photodetectors are discussed.
Original language | English (US) |
---|---|
Title of host publication | International Electron Devices Meeting 1991, IEDM 1991 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 745-748 |
Number of pages | 4 |
Volume | 1991-January |
ISBN (Electronic) | 0780302435 |
DOIs | |
State | Published - Jan 1 1991 |
Externally published | Yes |
Event | International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: Dec 8 1991 → Dec 11 1991 |
Other
Other | International Electron Devices Meeting, IEDM 1991 |
---|---|
Country | United States |
City | Washington |
Period | 12/8/91 → 12/11/91 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry