Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width

Stephen Y. Chou; Y. Liu; P. B. Fischer

doi:10.1109/IEDM.1991.235316

Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width

Stephen Y. Chou, Y. Liu, P. B. Fischer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic measurement using a femtosecond pulse laser and a 50-GHz sampling oscilloscope showed that the detectors' speed is much faster than that of the measuring system. Monte Carlo simulations show that, for an MSM photodetector with 25-nm finger spacing, its intrinsic and extrinsic impulse responses are 0.16 ps and 0.25 ps, respectively, and its cut-off frequency is over 1 THz. Finally, the scaling rules in achieving ultra-high-speed MSM photodetectors are discussed.

Original language	English (US)
Title of host publication	International Electron Devices Meeting 1991, IEDM 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	745-748
Number of pages	4
Volume	1991-January
ISBN (Electronic)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235316
State	Published - Jan 1 1991
Externally published	Yes
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: Dec 8 1991 → Dec 11 1991

Other

Other	International Electron Devices Meeting, IEDM 1991
Country	United States
City	Washington
Period	12/8/91 → 12/11/91

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1991.235316

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Chou, S. Y., Liu, Y., & Fischer, P. B. (1991). Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width. In International Electron Devices Meeting 1991, IEDM 1991 (Vol. 1991-January, pp. 745-748). [235316] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235316

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title = "Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width",

abstract = "Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic measurement using a femtosecond pulse laser and a 50-GHz sampling oscilloscope showed that the detectors' speed is much faster than that of the measuring system. Monte Carlo simulations show that, for an MSM photodetector with 25-nm finger spacing, its intrinsic and extrinsic impulse responses are 0.16 ps and 0.25 ps, respectively, and its cut-off frequency is over 1 THz. Finally, the scaling rules in achieving ultra-high-speed MSM photodetectors are discussed.",

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Chou, SY, Liu, Y & Fischer, PB 1991, Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width. in International Electron Devices Meeting 1991, IEDM 1991. vol. 1991-January, 235316, Institute of Electrical and Electronics Engineers Inc., pp. 745-748, International Electron Devices Meeting, IEDM 1991, Washington, United States, 12/8/91. https://doi.org/10.1109/IEDM.1991.235316

Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width. / Chou, Stephen Y.; Liu, Y.; Fischer, P. B.

International Electron Devices Meeting 1991, IEDM 1991. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. p. 745-748 235316.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width

AU - Chou, Stephen Y.

AU - Liu, Y.

AU - Fischer, P. B.

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N2 - Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic measurement using a femtosecond pulse laser and a 50-GHz sampling oscilloscope showed that the detectors' speed is much faster than that of the measuring system. Monte Carlo simulations show that, for an MSM photodetector with 25-nm finger spacing, its intrinsic and extrinsic impulse responses are 0.16 ps and 0.25 ps, respectively, and its cut-off frequency is over 1 THz. Finally, the scaling rules in achieving ultra-high-speed MSM photodetectors are discussed.

AB - Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic measurement using a femtosecond pulse laser and a 50-GHz sampling oscilloscope showed that the detectors' speed is much faster than that of the measuring system. Monte Carlo simulations show that, for an MSM photodetector with 25-nm finger spacing, its intrinsic and extrinsic impulse responses are 0.16 ps and 0.25 ps, respectively, and its cut-off frequency is over 1 THz. Finally, the scaling rules in achieving ultra-high-speed MSM photodetectors are discussed.

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