@inproceedings{c66eb579fe2d4623912109780b47de03,
title = "Tera-hertz GaAs metal-semiconductor-metal photodetectors with nanoscale finger spacing and width",
abstract = "Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic measurement using a femtosecond pulse laser and a 50-GHz sampling oscilloscope showed that the detectors' speed is much faster than that of the measuring system. Monte Carlo simulations show that, for an MSM photodetector with 25-nm finger spacing, its intrinsic and extrinsic impulse responses are 0.16 ps and 0.25 ps, respectively, and its cut-off frequency is over 1 THz. Finally, the scaling rules in achieving ultra-high-speed MSM photodetectors are discussed.",
keywords = "Fingers, Gallium arsenide, Laser beam cutting, Molecular beam epitaxial growth, Optical pulses, Oscilloscopes, Photodetectors, Pulse measurements, Sampling methods, Velocity measurement",
author = "Chou, {S. Y.} and Y. Liu and Fischer, {P. B.}",
note = "Publisher Copyright: {\textcopyright} 1991 IEEE. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.; International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",
year = "1991",
doi = "10.1109/IEDM.1991.235316",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "745--748",
booktitle = "International Electron Devices Meeting 1991, IEDM 1991",
address = "United States",
}