Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence

Vincenzo Spagnolo, Mariano Troccoli, Gaetano Scamarcio, Claire Gmachl, Federico Capasso, Alessandro Tredicucci, A. Michael Sergent, Albert L. Hutchinson, Deborah L. Sivco, Alfred Y. Cho

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Abstract

The local temperature of quantum-cascade lasers operating in continuous wave mode is reported. This information is extracted from the thermal shift of the band-to-band photoluminescence peaks in the AlInAs and InP cladding layers of quantum-cascade laser facets using a high-resolution microprobe setup. Interpolation by means of a two-dimensional heat diffusion model allows to obtain the temperature profile and the thermal conductivity in the waveguide core. Comparison between substrate and epilayer-side mounted lasers shows the superior thermal dissipation capability of the latter, and explains their better performance with respect to threshold current and maximum operating temperature.

Original languageEnglish (US)
Pages (from-to)2095-2097
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number15
DOIs
StatePublished - Apr 9 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Spagnolo, V., Troccoli, M., Scamarcio, G., Gmachl, C., Capasso, F., Tredicucci, A., Sergent, A. M., Hutchinson, A. L., Sivco, D. L., & Cho, A. Y. (2001). Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence. Applied Physics Letters, 78(15), 2095-2097. https://doi.org/10.1063/1.1359146