Abstract
The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.
Original language | English (US) |
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Pages (from-to) | 23-28 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 342 |
DOIs | |
State | Published - 1994 |
Event | Proceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 7 1994 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering