Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries

C. W. Cullen, J. C. Sturm

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

Original languageEnglish (US)
Pages (from-to)23-28
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume342
DOIs
StatePublished - 1994
EventProceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 4 1994Apr 7 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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