Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries

C. W. Cullen; J. C. Sturm

doi:10.1557/proc-342-23

Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries

C. W. Cullen, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

Original language	English (US)
Pages (from-to)	23-28
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	342
DOIs	https://doi.org/10.1557/proc-342-23
State	Published - 1994
Event	Proceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 7 1994

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-342-23

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@article{7960243719e243689e4180960a6165f0,

title = "Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries",

abstract = "The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.",

author = "Cullen, {C. W.} and Sturm, {J. C.}",

year = "1994",

doi = "10.1557/proc-342-23",

language = "English (US)",

volume = "342",

pages = "23--28",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 Spring Meeting of the Materials Research Society ; Conference date: 04-04-1994 Through 07-04-1994",

}

TY - JOUR

T1 - Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries

AU - Cullen, C. W.

AU - Sturm, J. C.

PY - 1994

Y1 - 1994

N2 - The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

AB - The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

UR - http://www.scopus.com/inward/record.url?scp=0028016565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028016565&partnerID=8YFLogxK

U2 - 10.1557/proc-342-23

DO - 10.1557/proc-342-23

M3 - Conference article

AN - SCOPUS:0028016565

SN - 0272-9172

VL - 342

SP - 23

EP - 28

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 Spring Meeting of the Materials Research Society

Y2 - 4 April 1994 through 7 April 1994

ER -

Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries

Abstract

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