Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

Makoto Okano; Shu Man Liu; Toshiyuki Ihara; Hirotake Itoh; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Kenneth West; Oana Malis

doi:10.1063/1.2709521

Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

Makoto Okano
, Shu Man Liu
, Toshiyuki Ihara
, Hirotake Itoh
, Masahiro Yoshita
, Hidefumi Akiyama
, Loren N. Pfeiffer
, Kenneth West
, Oana Malis

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.

Original language	English (US)
Article number	091108
Journal	Applied Physics Letters
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.2709521
State	Published - 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2709521

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@article{b98190278efb4c06a7a72d2adf979523,

title = "Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers",

abstract = "The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.",

author = "Makoto Okano and Liu, \{Shu Man\} and Toshiyuki Ihara and Hirotake Itoh and Masahiro Yoshita and Hidefumi Akiyama and Pfeiffer, \{Loren N.\} and Kenneth West and Oana Malis",

year = "2007",

doi = "10.1063/1.2709521",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

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TY - JOUR

T1 - Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

AU - Okano, Makoto

AU - Liu, Shu Man

AU - Ihara, Toshiyuki

AU - Itoh, Hirotake

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Kenneth

AU - Malis, Oana

PY - 2007

Y1 - 2007

N2 - The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.

AB - The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.

UR - https://www.scopus.com/pages/publications/33847687138

UR - https://www.scopus.com/pages/publications/33847687138#tab=citedBy

U2 - 10.1063/1.2709521

DO - 10.1063/1.2709521

M3 - Article

AN - SCOPUS:33847687138

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091108

ER -

Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

Abstract

All Science Journal Classification (ASJC) codes

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