Abstract
The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.
Original language | English (US) |
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Article number | 091108 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 9 |
DOIs | |
State | Published - 2007 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)