Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission

J. C. Sturm, P. M. Garone, P. V. Schwartz

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 μm over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.

Original languageEnglish (US)
Pages (from-to)542-544
Number of pages3
JournalJournal of Applied Physics
Volume69
Issue number1
DOIs
StatePublished - Dec 1 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission'. Together they form a unique fingerprint.

  • Cite this