Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission

J. C. Sturm; P. M. Garone; P. V. Schwartz

doi:10.1063/1.347705

Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission

J. C. Sturm, P. M. Garone, P. V. Schwartz

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Abstract

We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 μm over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.

Original language	English (US)
Pages (from-to)	542-544
Number of pages	3
Journal	Journal of Applied Physics
Volume	69
Issue number	1
DOIs	https://doi.org/10.1063/1.347705
State	Published - 1991

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.347705

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abstract = "We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 μm over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.",

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AU - Garone, P. M.

AU - Schwartz, P. V.

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N2 - We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 μm over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.

AB - We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 μm over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.

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Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission

Abstract

All Science Journal Classification (ASJC) codes

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