Temperature and field dependence of the generation of interface states in the Si-SiO₂ system after high-field stress

Keyphrases

• Field Stress 100%
• Interface States 100%
• Si-SiO2 100%
• Interface Generation 100%
• Time Dependence 100%
• Interface State Density 50%
• Two-peak 50%
• Formation Energy 50%
• Zero Bias 50%
• Polylogarithmic Time 50%
• Field Independent 50%
• Negative Bias 50%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 50%

Material Science

• Oxide Semiconductor 100%
• Capacitor 100%
• Stress Field 100%
• Metal Oxide 100%

Physics

• Stress Distribution 100%
• Time Dependence 100%
• Metal Oxide Semiconductor 50%