Temperature and field dependence of the generation of interface states in the Si-SiO2 system after high-field stress

J. K. Wu, Stephen Aplin Lyon, W. C. Johnson

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We have studied the time dependence of the generation of interface states in the Si-SiO2 system after metal-oxide-semiconductor capacitors were stressed by a 7.4-MV/cm gate positive electric field for 8 h at 90 K. The interface state density increased logarithmically with time for temperatures between 180 and 300 K with fields between +2 and -2 MV/cm. An analysis based upon a distribution of formation energies is proposed to explain the logarithmic time dependence. We find that there are two peaks in this distribution. One peak at 0.7 eV is field independent while the other at 0.9 eV disappears when a zero or negative bias is applied.

Original languageEnglish (US)
Pages (from-to)585-587
Number of pages3
JournalApplied Physics Letters
Volume42
Issue number7
DOIs
StatePublished - Dec 1 1983

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Temperature and field dependence of the generation of interface states in the Si-SiO<sub>2</sub> system after high-field stress'. Together they form a unique fingerprint.

Cite this