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TECHNIQUE FOR RADIATION EFFECTS MEASUREMENTS OF SOI.
William M. Miller
, Sylvia S. Tsao
,
Loren Pfeiffer
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
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Dive into the research topics of 'TECHNIQUE FOR RADIATION EFFECTS MEASUREMENTS OF SOI.'. Together they form a unique fingerprint.
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Keyphrases
Effect Measurement
100%
Radiation Effects
100%
Silicon-on-insulator
100%
Interface States
33%
Radiation Response
33%
State of Charge
33%
Deconvolution
33%
Voltage Data
33%
Melt-recrystallization
33%
Capacitance-voltage
33%
Silicon-on-insulator Structure
33%
Capacitance-voltage Curve
33%
Oxide Trapped Charge
33%
Total Dose Effects
33%
Engineering
Radiation Effect
100%
Silicon on Insulator
100%
Silicon on Insulator Material
100%
Deconvolution
50%
Interface State
50%
Charge State
50%
Material Science
Silicon
100%
Capacitance
100%
Silicon on Insulator Material
100%
Oxide Compound
50%