TECHNIQUE FOR RADIATION EFFECTS MEASUREMENTS OF SOI.

William M. Miller; Sylvia S. Tsao; Loren Pfeiffer

TECHNIQUE FOR RADIATION EFFECTS MEASUREMENTS OF SOI.

William M. Miller
, Sylvia S. Tsao
, Loren Pfeiffer

Research output: Contribution to journal › Article › peer-review

Abstract

The authors have developed and tested a technique for measuring and comparing the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide-trapped charge and interface states are determined. The authors examine the total-dose effects on SOI material prepared by melt recrystallization.

Original language	English (US)
Journal	IEEE Transactions on Nuclear Science
Volume	NS-33
Issue number	6
State	Published - Dec 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Cite this

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title = "TECHNIQUE FOR RADIATION EFFECTS MEASUREMENTS OF SOI.",

abstract = "The authors have developed and tested a technique for measuring and comparing the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide-trapped charge and interface states are determined. The authors examine the total-dose effects on SOI material prepared by melt recrystallization.",

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year = "1986",

month = dec,

language = "English (US)",

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journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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AU - Miller, William M.

AU - Tsao, Sylvia S.

AU - Pfeiffer, Loren

PY - 1986/12

Y1 - 1986/12

N2 - The authors have developed and tested a technique for measuring and comparing the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide-trapped charge and interface states are determined. The authors examine the total-dose effects on SOI material prepared by melt recrystallization.

AB - The authors have developed and tested a technique for measuring and comparing the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide-trapped charge and interface states are determined. The authors examine the total-dose effects on SOI material prepared by melt recrystallization.

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M3 - Article

AN - SCOPUS:0022866614

SN - 0018-9499

VL - NS-33

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

TECHNIQUE FOR RADIATION EFFECTS MEASUREMENTS OF SOI.

Abstract

All Science Journal Classification (ASJC) codes

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