Technique for radiation effects measurements of SOI

William M. Miller, Sylvia S. Tsao, Loren Pfeiffer

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We have developed and tested a technique for measuring the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures, to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide trapped charge and interface states are determined. The technique was designed to provide a comparison of the radiation responses of different SOI materials. In this paper we examine the total dose effects on SOI material prepared by melt recrystallization.

Original languageEnglish (US)
Pages (from-to)1381-1384
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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