Technique for radiation effects measurements of SOI

William M. Miller; Sylvia S. Tsao; Loren Pfeiffer

doi:10.1109/TNS.1986.4334609

Technique for radiation effects measurements of SOI

William M. Miller, Sylvia S. Tsao, Loren Pfeiffer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have developed and tested a technique for measuring the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures, to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide trapped charge and interface states are determined. The technique was designed to provide a comparison of the radiation responses of different SOI materials. In this paper we examine the total dose effects on SOI material prepared by melt recrystallization.

Original language	English (US)
Pages (from-to)	1381-1384
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	33
Issue number	6
DOIs	https://doi.org/10.1109/TNS.1986.4334609
State	Published - Dec 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.1986.4334609

Cite this

@article{7e255befa09f4d6f84cc39cc98e2eca3,

title = "Technique for radiation effects measurements of SOI",

abstract = "We have developed and tested a technique for measuring the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures, to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide trapped charge and interface states are determined. The technique was designed to provide a comparison of the radiation responses of different SOI materials. In this paper we examine the total dose effects on SOI material prepared by melt recrystallization.",

author = "Miller, {William M.} and Tsao, {Sylvia S.} and Loren Pfeiffer",

year = "1986",

month = dec,

doi = "10.1109/TNS.1986.4334609",

language = "English (US)",

volume = "33",

pages = "1381--1384",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Technique for radiation effects measurements of SOI

AU - Miller, William M.

AU - Tsao, Sylvia S.

AU - Pfeiffer, Loren

PY - 1986/12

Y1 - 1986/12

N2 - We have developed and tested a technique for measuring the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures, to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide trapped charge and interface states are determined. The technique was designed to provide a comparison of the radiation responses of different SOI materials. In this paper we examine the total dose effects on SOI material prepared by melt recrystallization.

AB - We have developed and tested a technique for measuring the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures, to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide trapped charge and interface states are determined. The technique was designed to provide a comparison of the radiation responses of different SOI materials. In this paper we examine the total dose effects on SOI material prepared by melt recrystallization.

UR - http://www.scopus.com/inward/record.url?scp=84939069939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939069939&partnerID=8YFLogxK

U2 - 10.1109/TNS.1986.4334609

DO - 10.1109/TNS.1986.4334609

M3 - Article

AN - SCOPUS:84939069939

SN - 0018-9499

VL - 33

SP - 1381

EP - 1384

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

Technique for radiation effects measurements of SOI

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this