Systematic modification of indium tin oxide to enhance diode device behavior

Jing Guo, Norbert Koch, Jeffrey Schwartz, Steven L. Bernasek

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Monolayers of tin complexes of phenoxide ligands spanning a range of dipole moments were prepared on the surface of ITO via simple metathesis reactions. They were characterized by quartz crystal microgravimetry (QCM) and a Kelvin probe. A nearly linear relationship was found between the measured ITO work functions and dipoles of the surface complexes. Measurements of current densities of diode devices built on surface modified ITO anodes were made, and a correlation was found between the total surface dipole per unit area and these current densities. Simple OLED devices were also constructed using these modified anodes.

Original languageEnglish (US)
Title of host publicationOrganic Thin-Film Electronics
PublisherMaterials Research Society
Pages257-262
Number of pages6
ISBN (Print)155899825X, 9781558998254
DOIs
StatePublished - 2005
Event2005 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume871
ISSN (Print)0272-9172

Other

Other2005 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/28/054/1/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Guo, J., Koch, N., Schwartz, J., & Bernasek, S. L. (2005). Systematic modification of indium tin oxide to enhance diode device behavior. In Organic Thin-Film Electronics (pp. 257-262). (Materials Research Society Symposium Proceedings; Vol. 871). Materials Research Society. https://doi.org/10.1557/proc-871-i6.52