Systematic modification of indium tin oxide to enhance diode device behavior

Jing Guo; Norbert Koch; Jeffrey Schwartz; Steven L. Bernasek

doi:10.1557/proc-871-i6.52

Systematic modification of indium tin oxide to enhance diode device behavior

Jing Guo, Norbert Koch, Jeffrey Schwartz, Steven L. Bernasek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Monolayers of tin complexes of phenoxide ligands spanning a range of dipole moments were prepared on the surface of ITO via simple metathesis reactions. They were characterized by quartz crystal microgravimetry (QCM) and a Kelvin probe. A nearly linear relationship was found between the measured ITO work functions and dipoles of the surface complexes. Measurements of current densities of diode devices built on surface modified ITO anodes were made, and a correlation was found between the total surface dipole per unit area and these current densities. Simple OLED devices were also constructed using these modified anodes.

Original language	English (US)
Title of host publication	Organic Thin-Film Electronics
Publisher	Materials Research Society
Pages	257-262
Number of pages	6
ISBN (Print)	155899825X, 9781558998254
DOIs	https://doi.org/10.1557/proc-871-i6.52
State	Published - 2005
Event	2005 MRS Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	871
ISSN (Print)	0272-9172

Other

Other	2005 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	3/28/05 → 4/1/05

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-871-i6.52

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title = "Systematic modification of indium tin oxide to enhance diode device behavior",

abstract = "Monolayers of tin complexes of phenoxide ligands spanning a range of dipole moments were prepared on the surface of ITO via simple metathesis reactions. They were characterized by quartz crystal microgravimetry (QCM) and a Kelvin probe. A nearly linear relationship was found between the measured ITO work functions and dipoles of the surface complexes. Measurements of current densities of diode devices built on surface modified ITO anodes were made, and a correlation was found between the total surface dipole per unit area and these current densities. Simple OLED devices were also constructed using these modified anodes.",

author = "Jing Guo and Norbert Koch and Jeffrey Schwartz and Bernasek, {Steven L.}",

year = "2005",

doi = "10.1557/proc-871-i6.52",

language = "English (US)",

isbn = "155899825X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "257--262",

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address = "United States",

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TY - GEN

T1 - Systematic modification of indium tin oxide to enhance diode device behavior

AU - Guo, Jing

AU - Koch, Norbert

AU - Schwartz, Jeffrey

AU - Bernasek, Steven L.

PY - 2005

Y1 - 2005

N2 - Monolayers of tin complexes of phenoxide ligands spanning a range of dipole moments were prepared on the surface of ITO via simple metathesis reactions. They were characterized by quartz crystal microgravimetry (QCM) and a Kelvin probe. A nearly linear relationship was found between the measured ITO work functions and dipoles of the surface complexes. Measurements of current densities of diode devices built on surface modified ITO anodes were made, and a correlation was found between the total surface dipole per unit area and these current densities. Simple OLED devices were also constructed using these modified anodes.

AB - Monolayers of tin complexes of phenoxide ligands spanning a range of dipole moments were prepared on the surface of ITO via simple metathesis reactions. They were characterized by quartz crystal microgravimetry (QCM) and a Kelvin probe. A nearly linear relationship was found between the measured ITO work functions and dipoles of the surface complexes. Measurements of current densities of diode devices built on surface modified ITO anodes were made, and a correlation was found between the total surface dipole per unit area and these current densities. Simple OLED devices were also constructed using these modified anodes.

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U2 - 10.1557/proc-871-i6.52

DO - 10.1557/proc-871-i6.52

M3 - Conference contribution

AN - SCOPUS:34249947719

SN - 155899825X

SN - 9781558998254

T3 - Materials Research Society Symposium Proceedings

SP - 257

EP - 262

BT - Organic Thin-Film Electronics

PB - Materials Research Society

T2 - 2005 MRS Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Systematic modification of indium tin oxide to enhance diode device behavior

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