Synthesis, crystal structure and thermoelectric properties of IrSn1.5Te1.5 -based skutterudites

J. W.G. Bos; R. J. Cava

doi:10.1016/j.ssc.2006.09.035

Synthesis, crystal structure and thermoelectric properties of IrSn_1.5Te_1.5 -based skutterudites

J. W.G. Bos, R. J. Cava

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The mixed anion skutterudite IrSn_1.5Te_1.5 has been synthesized and characterized by X-ray powder diffraction, thermopower and electrical resistivity measurements. Structural analysis reveals that Sn and Te order in layers perpendicular to the [111] direction of the skutterudite unit cell, and a distortion of the anion sublattice is evident. The thermopower (S) is 160 μV/K at room temperature, while the electrical resistivity (ρ) is 65 m Ω cm. The effects of chemical substitutions on the Ir site (Ru, Pd) and Sn site (In, Sb) have been investigated. The power factor (S² / ρ) was found to improve with In substitution but, at 0.9 μW/K² cm, is too small for this material to be useful for thermoelectric applications.

Original language	English (US)
Pages (from-to)	38-41
Number of pages	4
Journal	Solid State Communications
Volume	141
Issue number	1
DOIs	https://doi.org/10.1016/j.ssc.2006.09.035
State	Published - Jan 2007

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. Semiconductors
B. Chemical synthesis
C. Crystal structure and symmetry
D. Electronic transport

Access to Document

10.1016/j.ssc.2006.09.035

Cite this

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title = "Synthesis, crystal structure and thermoelectric properties of IrSn1.5Te1.5 -based skutterudites",

abstract = "The mixed anion skutterudite IrSn1.5Te1.5 has been synthesized and characterized by X-ray powder diffraction, thermopower and electrical resistivity measurements. Structural analysis reveals that Sn and Te order in layers perpendicular to the [111] direction of the skutterudite unit cell, and a distortion of the anion sublattice is evident. The thermopower (S) is 160 μV/K at room temperature, while the electrical resistivity (ρ) is 65 m Ω cm. The effects of chemical substitutions on the Ir site (Ru, Pd) and Sn site (In, Sb) have been investigated. The power factor (S2 / ρ) was found to improve with In substitution but, at 0.9 μW/K2 cm, is too small for this material to be useful for thermoelectric applications.",

keywords = "A. Semiconductors, B. Chemical synthesis, C. Crystal structure and symmetry, D. Electronic transport",

author = "Bos, {J. W.G.} and Cava, {R. J.}",

note = "Funding Information: This work was supported by the US Air Force Research Laboratory.",

year = "2007",

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doi = "10.1016/j.ssc.2006.09.035",

language = "English (US)",

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journal = "Solid State Communications",

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T1 - Synthesis, crystal structure and thermoelectric properties of IrSn1.5Te1.5 -based skutterudites

AU - Bos, J. W.G.

AU - Cava, R. J.

N1 - Funding Information: This work was supported by the US Air Force Research Laboratory.

PY - 2007/1

Y1 - 2007/1

N2 - The mixed anion skutterudite IrSn1.5Te1.5 has been synthesized and characterized by X-ray powder diffraction, thermopower and electrical resistivity measurements. Structural analysis reveals that Sn and Te order in layers perpendicular to the [111] direction of the skutterudite unit cell, and a distortion of the anion sublattice is evident. The thermopower (S) is 160 μV/K at room temperature, while the electrical resistivity (ρ) is 65 m Ω cm. The effects of chemical substitutions on the Ir site (Ru, Pd) and Sn site (In, Sb) have been investigated. The power factor (S2 / ρ) was found to improve with In substitution but, at 0.9 μW/K2 cm, is too small for this material to be useful for thermoelectric applications.

AB - The mixed anion skutterudite IrSn1.5Te1.5 has been synthesized and characterized by X-ray powder diffraction, thermopower and electrical resistivity measurements. Structural analysis reveals that Sn and Te order in layers perpendicular to the [111] direction of the skutterudite unit cell, and a distortion of the anion sublattice is evident. The thermopower (S) is 160 μV/K at room temperature, while the electrical resistivity (ρ) is 65 m Ω cm. The effects of chemical substitutions on the Ir site (Ru, Pd) and Sn site (In, Sb) have been investigated. The power factor (S2 / ρ) was found to improve with In substitution but, at 0.9 μW/K2 cm, is too small for this material to be useful for thermoelectric applications.

KW - A. Semiconductors

KW - B. Chemical synthesis

KW - C. Crystal structure and symmetry

KW - D. Electronic transport

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