Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe3

Danrui Ni; Teresa Lee; Stephen Zhang; Xianghan Xu; R. J. Cava

doi:10.1021/acs.inorgchem.4c05396

Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe₃

Danrui Ni, Teresa Lee, Stephen Zhang, Xianghan Xu, R. J. Cava

Research output: Contribution to journal › Article › peer-review

Abstract

The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe₃ are described. The crystal structure, which is based on 1D chains of Ti-Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se-Se pair, is similar to that of TiS₃. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.

Original language	English (US)
Journal	Inorganic Chemistry
DOIs	https://doi.org/10.1021/acs.inorgchem.4c05396
State	Accepted/In press - 2025

All Science Journal Classification (ASJC) codes

Physical and Theoretical Chemistry
Inorganic Chemistry

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10.1021/acs.inorgchem.4c05396

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title = "Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe3",

abstract = "The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe3 are described. The crystal structure, which is based on 1D chains of Ti-Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se-Se pair, is similar to that of TiS3. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.",

author = "Danrui Ni and Teresa Lee and Stephen Zhang and Xianghan Xu and Cava, \{R. J.\}",

note = "Publisher Copyright: {\textcopyright} 2025 American Chemical Society.",

year = "2025",

doi = "10.1021/acs.inorgchem.4c05396",

language = "English (US)",

journal = "Inorganic Chemistry",

issn = "0020-1669",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe3

AU - Ni, Danrui

AU - Lee, Teresa

AU - Zhang, Stephen

AU - Xu, Xianghan

AU - Cava, R. J.

PY - 2025

Y1 - 2025

N2 - The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe3 are described. The crystal structure, which is based on 1D chains of Ti-Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se-Se pair, is similar to that of TiS3. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.

AB - The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe3 are described. The crystal structure, which is based on 1D chains of Ti-Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se-Se pair, is similar to that of TiS3. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.

UR - https://www.scopus.com/pages/publications/85218242443

UR - https://www.scopus.com/inward/citedby.url?scp=85218242443&partnerID=8YFLogxK

U2 - 10.1021/acs.inorgchem.4c05396

DO - 10.1021/acs.inorgchem.4c05396

M3 - Article

C2 - 39977369

AN - SCOPUS:85218242443

SN - 0020-1669

JO - Inorganic Chemistry

JF - Inorganic Chemistry

ER -

Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe₃

Abstract

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