Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe3

Danrui Ni; Teresa Lee; Stephen Zhang; Xianghan Xu; R. J. Cava

doi:10.1021/acs.inorgchem.4c05396

Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe₃

Danrui Ni
, Teresa Lee
, Stephen Zhang
, Xianghan Xu
, R. J. Cava

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe₃ are described. The crystal structure, which is based on 1D chains of Ti–Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se–Se pair, is similar to that of TiS₃. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.

Original language	English (US)
Pages (from-to)	4062-4066
Number of pages	5
Journal	Inorganic Chemistry
Volume	64
Issue number	8
DOIs	https://doi.org/10.1021/acs.inorgchem.4c05396
State	Published - Mar 3 2025

All Science Journal Classification (ASJC) codes

Physical and Theoretical Chemistry
Inorganic Chemistry

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10.1021/acs.inorgchem.4c05396

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abstract = "The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe3 are described. The crystal structure, which is based on 1D chains of Ti–Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se–Se pair, is similar to that of TiS3. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.",

author = "Danrui Ni and Teresa Lee and Stephen Zhang and Xianghan Xu and Cava, \{R. J.\}",

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T1 - Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe3

AU - Ni, Danrui

AU - Lee, Teresa

AU - Zhang, Stephen

AU - Xu, Xianghan

AU - Cava, R. J.

PY - 2025/3/3

Y1 - 2025/3/3

N2 - The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe3 are described. The crystal structure, which is based on 1D chains of Ti–Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se–Se pair, is similar to that of TiS3. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.

AB - The solid-state synthesis at an applied pressure of 6 GPa, crystal structure, and elementary electronic properties of the previously unreported compound TiSe3 are described. The crystal structure, which is based on 1D chains of Ti–Se triangular prisms that are coupled to each other, with two-thirds of the Se involved in a Se–Se pair, is similar to that of TiS3. Unlike the trisulfide, the triselenide is only made under pressure at temperatures between 800 and 900 °C. The material is semiconducting and weakly diamagnetic.

UR - https://www.scopus.com/pages/publications/85218242443

UR - https://www.scopus.com/pages/publications/85218242443#tab=citedBy

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JO - Inorganic Chemistry

JF - Inorganic Chemistry

IS - 8

ER -

Synthesis, Crystal Structure, and Elementary Electrical Characterization of Quasi-One-Dimensional TiSe₃

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