Abstract
The roles of ultraviolet/vacuum ultraviolet (UV/VUV) photons, Ar+ ion bombardment and heating in the roughening of 193 nm photoresist have been investigated. Atomic force microscopy measurements show minimal surface roughness after UV/VUV-only or ion-only exposures at any temperature. Simultaneous UV/VUV, ion bombardment, and heating to surface temperatures of 60-100 °C result in increased surface roughness, and is comparable to argon plasma-exposed samples. Ion bombardment creates a modified near-surface layer while UV/VUV radiation results in loss of carbon-oxygen bonds up to a depth of ∼100 nm. Enhanced roughness is only observed in the presence of all three effects.
| Original language | English (US) |
|---|---|
| Article number | 153113 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 15 |
| DOIs | |
| State | Published - 2008 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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