Symmetric Si/Si1-xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition

V. Venkataraman, P. V. Schwartz, J. C. Sturm

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Single and symmetric double p-type modulation-doped structures have been fabricated in Si/SiGe for the first time by rapid-thermal chemical-vapor deposition. Temperature-dependent electrical measurements and high-field magnetotransport measurements demonstrate the presence of a well-confined two-dimensional hole gas in these samples. Nominally-symmetric normal and inverted structures differ in carrier density and mobility at most by 20%, indicating that there is little asymmetry due to surface segregation or autodoping effects. Measurements on double heterostructures confirm that the interfaces are symmetric to within 10 Å. Peak mobilities reached 2500 cm2/V s at 10 K, comparable to those obtained in similar samples grown by ultrahigh vacuum techniques.

Original languageEnglish (US)
Pages (from-to)2871-2873
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number22
DOIs
StatePublished - Dec 1 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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