Abstract

The atomic structures of the two inequivalent (211) surfaces of GaAs have been investigated by LEED. Both surfaces, prepared by etching and heat-cleaning or ion-sputtering and annealing, are unstable and develop large (110) facets which exhibit the atomic geometry of the (110) GaAs surface. These facets entirely cover the surface. Three sets of facets, making 30°, 30° and 54° angles with the (211) plane, are detected on one surface. Only two sets, making 30° angles with the (211) plane, are detected on the other. The reasons for this difference are not understood at this time. The LEED study of Si(211) and Ge(211) shows that the Si surface is flat whereas the Ge surface exhibits reconstructed (311) facets. The structural difference between the (211) surfaces of GaAs and Ge and the facetting of the compound are invoked to explain the problems encountered in the MBE growth of GaAs on Ge(211).

Original languageEnglish (US)
Pages (from-to)69-79
Number of pages11
JournalSurface Science
Volume146
Issue number1
DOIs
StatePublished - Oct 2 1984

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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