@inproceedings{1ef24d9618a74508b7df4d05e02196ef,
title = "Surface stability and atomic-step-edge kinetics on a cleaved-edge-overgrown (110) GaAs surface",
abstract = "We investigate the evolution of surface smoothness and atomic step-edge patterns on 6-nm (110) GaAs surfaces grown by cleaved-edge overgrowth with molecular beam epitaxy (MBE) and subsequent in situ annealing at elevated substrate temperatures ranging from 590 to 650°C. As the annealing temperature was increased, island structures of μm scale formed on the annealed surfaces decreased in size and almost disappeared at 630°C while pit structures and underlying monolayer terraces increased in size, which indicate that the surface migration of atoms are enhanced and flatten the (110) surface during annealing. At higher annealing temperatures above 630°C, new triangular-shaped pit structures appeared on the surface, which disturbs atomic-scale smoothing of the (110) surfaces.",
keywords = "(110) GaAs, Cleaved-edge overgrowth, MBE, Step-edge kinetics, Surface morphology",
author = "Masahiro Yoshita and Hidefumi Akiyama and Pfeiffer, {Loren N.} and West, {Ken W.}",
year = "2007",
doi = "10.1063/1.2729782",
language = "English (US)",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "85--86",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}