Surface resonant tunneling transistor: A new negative transconductance device

Ç Kurdak; D. C. Tsui; S. Parihar; M. B. Santos; H. C. Manoharan; S. A. Lyon; M. Shayegan

doi:10.1063/1.111065

Surface resonant tunneling transistor: A new negative transconductance device

Ç Kurdak, D. C. Tsui, S. Parihar, M. B. Santos, H. C. Manoharan, S. A. Lyon, M. Shayegan

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.

Original language	English (US)
Pages (from-to)	610-612
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	5
DOIs	https://doi.org/10.1063/1.111065
State	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.111065

Cite this

@article{2f377ff8471c4a79822cb9bb77e2c9c8,

title = "Surface resonant tunneling transistor: A new negative transconductance device",

abstract = "A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.",

author = "{\c C} Kurdak and Tsui, {D. C.} and S. Parihar and Santos, {M. B.} and Manoharan, {H. C.} and Lyon, {S. A.} and M. Shayegan",

year = "1994",

doi = "10.1063/1.111065",

language = "English (US)",

volume = "64",

pages = "610--612",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Surface resonant tunneling transistor

T2 - A new negative transconductance device

AU - Kurdak, Ç

AU - Tsui, D. C.

AU - Parihar, S.

AU - Santos, M. B.

AU - Manoharan, H. C.

AU - Lyon, S. A.

AU - Shayegan, M.

PY - 1994

Y1 - 1994

N2 - A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.

AB - A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.

UR - http://www.scopus.com/inward/record.url?scp=36449005785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449005785&partnerID=8YFLogxK

U2 - 10.1063/1.111065

DO - 10.1063/1.111065

M3 - Article

AN - SCOPUS:36449005785

SN - 0003-6951

VL - 64

SP - 610

EP - 612

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Surface resonant tunneling transistor: A new negative transconductance device

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this