Surface resonant tunneling transistor: A new negative transconductance device

Ç Kurdak, D. C. Tsui, S. Parihar, M. B. Santos, H. C. Manoharan, Stephen Aplin Lyon, Mansour Shayegan

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.

Original languageEnglish (US)
Pages (from-to)610-612
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - Dec 1 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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