A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1994|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)