Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study

D. Mao; Antoine Kahn; G. LeLay; M. Marsi; Y. Hwu; G. Margaritondo; M. Santos; Mansour Shayegan; L. T. Florez; J. P. Harbison

doi:10.1116/1.585779

Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study

D. Mao, Antoine Kahn, G. LeLay, M. Marsi, Y. Hwu, G. Margaritondo, M. Santos, Mansour Shayegan, L. T. Florez, J. P. Harbison

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfaces. A large and quasipermanent SPV is found at surfaces of low doped and low temperature (110) samples. SPV discharge mechanisms are investigated. Finally, the CPD technique is used to define conditions which minimize SPV and allow accurate measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and (110) and (100) GaAs surfaces.

Original language	English (US)
Pages (from-to)	2083-2089
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	9
Issue number	4
DOIs	https://doi.org/10.1116/1.585779
State	Published - Jul 1 1991

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Band structure
Contact potential
Gallium arsenides
Metals
Photoelectron spectroscopy
Photovoltaic effect
Surfaces
Synchrotron radiation
Ultrahigh vacuum

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10.1116/1.585779

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Mao, D., Kahn, A., LeLay, G., Marsi, M., Hwu, Y., Margaritondo, G., Santos, M., Shayegan, M., Florez, L. T., & Harbison, J. P. (1991). Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 9(4), 2083-2089. https://doi.org/10.1116/1.585779

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title = "Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study",

abstract = "Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfaces. A large and quasipermanent SPV is found at surfaces of low doped and low temperature (110) samples. SPV discharge mechanisms are investigated. Finally, the CPD technique is used to define conditions which minimize SPV and allow accurate measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and (110) and (100) GaAs surfaces.",

keywords = "Band structure, Contact potential, Gallium arsenides, Metals, Photoelectron spectroscopy, Photovoltaic effect, Surfaces, Synchrotron radiation, Ultrahigh vacuum",

author = "D. Mao and Antoine Kahn and G. LeLay and M. Marsi and Y. Hwu and G. Margaritondo and M. Santos and Mansour Shayegan and Florez, {L. T.} and Harbison, {J. P.}",

note = "Publisher Copyright: {\textcopyright} 1991 American Vacuum Society.",

year = "1991",

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doi = "10.1116/1.585779",

language = "English (US)",

volume = "9",

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Mao, D, Kahn, A, LeLay, G, Marsi, M, Hwu, Y, Margaritondo, G, Santos, M, Shayegan, M, Florez, LT & Harbison, JP 1991, 'Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 9, no. 4, pp. 2083-2089. https://doi.org/10.1116/1.585779

Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study. / Mao, D.; Kahn, Antoine; LeLay, G. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 4, 01.07.1991, p. 2083-2089.

Research output: Contribution to journal › Article › peer-review

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T1 - Surface photovoltage and band bending at metal/GaAs interfaces

T2 - A contact potential difference and photoemission spectroscopy study

AU - Mao, D.

AU - Kahn, Antoine

AU - LeLay, G.

AU - Marsi, M.

AU - Hwu, Y.

AU - Margaritondo, G.

AU - Santos, M.

AU - Shayegan, Mansour

AU - Florez, L. T.

AU - Harbison, J. P.

PY - 1991/7/1

Y1 - 1991/7/1

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AB - Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfaces. A large and quasipermanent SPV is found at surfaces of low doped and low temperature (110) samples. SPV discharge mechanisms are investigated. Finally, the CPD technique is used to define conditions which minimize SPV and allow accurate measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and (110) and (100) GaAs surfaces.

KW - Band structure

KW - Contact potential

KW - Gallium arsenides

KW - Metals

KW - Photoelectron spectroscopy

KW - Photovoltaic effect

KW - Surfaces

KW - Synchrotron radiation

KW - Ultrahigh vacuum

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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