Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study

D. Mao, Antoine Kahn, G. LeLay, M. Marsi, Y. Hwu, G. Margaritondo, M. Santos, Mansour Shayegan, L. T. Florez, J. P. Harbison

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfaces. A large and quasipermanent SPV is found at surfaces of low doped and low temperature (110) samples. SPV discharge mechanisms are investigated. Finally, the CPD technique is used to define conditions which minimize SPV and allow accurate measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and (110) and (100) GaAs surfaces.

Original languageEnglish (US)
Pages (from-to)2083-2089
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
StatePublished - Jul 1 1991

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Band structure
  • Contact potential
  • Gallium arsenides
  • Metals
  • Photoelectron spectroscopy
  • Photovoltaic effect
  • Surfaces
  • Synchrotron radiation
  • Ultrahigh vacuum

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