Surface oxidation activates indium tin oxide for hole injection

D. J. Milliron; I. G. Hill; C. Shen; A. Kahn; J. Schwartz

doi:10.1063/1.371901

Surface oxidation activates indium tin oxide for hole injection

D. J. Milliron, I. G. Hill, C. Shen, A. Kahn, J. Schwartz

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300 Scopus citations

Abstract

Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple "hole-only" organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O^• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results.

Original language	English (US)
Pages (from-to)	572-576
Number of pages	5
Journal	Journal of Applied Physics
Volume	87
Issue number	1
DOIs	https://doi.org/10.1063/1.371901
State	Published - Jan 1 2000

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.371901

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title = "Surface oxidation activates indium tin oxide for hole injection",

abstract = "Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple {"}hole-only{"} organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results.",

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AU - Milliron, D. J.

AU - Hill, I. G.

AU - Shen, C.

AU - Kahn, A.

AU - Schwartz, J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple "hole-only" organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results.

AB - Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple "hole-only" organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results.

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Surface oxidation activates indium tin oxide for hole injection

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